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2N3109 Datasheet PDF


Part Number 2N3109
Manufacturer Central
Title Small Signal Transistors
Description VCBO (V) VCEO (V) *VCER VEBO (V) ICBO @ VCB (µA) (V) *ICEO **ICES ***ICEV ****ICER MIN 5.0 5.0 5.0 5.0 5.0 5.0 4.0 5.0 5.0 5.0 5.0 5.0 5.0 7.0 7.0...
Features 0 30 100 150 300 150 150 50 500 500 500 500 150 150 150 2.5 1,000 1,000 20 20 1.0 1.0 2.0 2.0 10 10 5.0 10 10 10 10 10 10 10 10 10 1.0 10 10 10 10 10 10 1.0 10 10 10 5.0 1.0 1.0 1.0 1.0 10 10 10 5.0 2.0 2.0 10 10 MAX 0.40 0.40 0.50 0.50 0.40 0.40 0.25 0.50 0.50 0.50 0.50 2.00 0.40 0.20 0.20 1.40 1.0...

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Datasheet 2N3109 PDF File








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2N3001 : 2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Symbol 2N3001 2N3002 2N3003 2N3004 Unit Static Off-State Voltage (1) VD 30 60 100 200 V Repetitive Peak Off-State Voltage (1) VDRM 30 60 100 200 V Static Reverse Voltage (2) VR 30 60 100 200 V Repetitive Peak Reverse Voltage(2) VRRM 30 60 100 200 V Continuous or RMS On-State Current at (or below) 55°C Free Air Temperature.

2N3002 : 2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Symbol 2N3001 2N3002 2N3003 2N3004 Unit Static Off-State Voltage (1) VD 30 60 100 200 V Repetitive Peak Off-State Voltage (1) VDRM 30 60 100 200 V Static Reverse Voltage (2) VR 30 60 100 200 V Repetitive Peak Reverse Voltage(2) VRRM 30 60 100 200 V Continuous or RMS On-State Current at (or below) 55°C Free Air Temperature.

2N3003 : 2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Symbol 2N3001 2N3002 2N3003 2N3004 Unit Static Off-State Voltage (1) VD 30 60 100 200 V Repetitive Peak Off-State Voltage (1) VDRM 30 60 100 200 V Static Reverse Voltage (2) VR 30 60 100 200 V Repetitive Peak Reverse Voltage(2) VRRM 30 60 100 200 V Continuous or RMS On-State Current at (or below) 55°C Free Air Temperature.

2N3004 : 2N3001-2N3004 High-reliability discrete products and engineering services since 1977 SILICON REVERSE BLOCKING THYRISTORS FEATURES • Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. • Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Ratings Symbol 2N3001 2N3002 2N3003 2N3004 Unit Static Off-State Voltage (1) VD 30 60 100 200 V Repetitive Peak Off-State Voltage (1) VDRM 30 60 100 200 V Static Reverse Voltage (2) VR 30 60 100 200 V Repetitive Peak Reverse Voltage(2) VRRM 30 60 100 200 V Continuous or RMS On-State Current at (or below) 55°C Free Air Temperature.

2N3007 : www.DataSheet4U.com 2N3007 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPNP Device in a Hermetically sealed TO18 Metal Package. Bipolar NPNP Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.35A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 100 0.35 Units V A Hz W @ (VCE / IC) * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@se.

2N3009 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

2N3009 : 2N3009 (SILICON) 2N3013 2N3013JAN AVAILABLE 2N3014 NPN silicon epitaxial switching transistors designed for high-speed, medium-power saturated switching applications MAXIMUM RATINGS CASE 27 (TO·52) Collector Connected to Case Rating Collector-Emitter Voltage2N3009, 2N3013 2N3014 Collector-Emitter Voltage Symbol VCEO * VCES Collector-Base Voltage VCB Emitter-Base Voltage 2N3009 2N3013. 2N3014 YEB Collector Current - Continuous (lOlls pulse) Peak Total Device DiSSiPation@TA • 25'C Derate above 25' C IC PD Total Device DiSSipation@TC • 25' C @TC = 100'C Derate above 2SoC PD Operating and Storage Junction Temperature Range TJ, Tstg * Applicable from 0.01 mA to 10 mA (Pulsed) .

2N3010 : 2N3010 (SILICON) CASE 22 (TO-18) NPN silicon low-power transistor primarily designed for high-speed, saturated switching applications. Collector connected to case MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage* VCEO* Collector-Emitter Voltage VCES Collector-Base Voltage VCB Emitter-Base Voltage VEB Collector Current - Continuous IC Total Device Dissipation @TA = 25°C Derate above 25° C Operating and Storage Junction Temperature Range PD TJ , Tstg * Applicable from 0.01 mAdc to 10 mAdc (Pulsed). Value 6.0 11 15 4_0 50 0.30 1.71 -65 to +200 Unit Vdc Vdc Vdc Vdc mAdc Watt mW/oC °c FIGURE 1 - TURN-ON AND TURN·OFF TIME TEST CIRCUIT Vee = +1.0 V TO OSCILLOSCOPE RISE T.

2N3011 : The CENTRAL SEMICONDUCTOR 2N3011 is a silicon epitaxial planar NPN transistor designed for ultra high speed saturated switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current (tp=10μs) Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC ICM PD PD TJ, Tstg ΘJA ΘJC 30 30 12 5.0 200 500 360 1.2 -65 to +200 486 146 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICES .

2N3011 : 2N3011 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 1 – Emitter TO18 (TO206AA) PINOUTS 2 – Base 3 – Collector Bipolar NPN Device. VCEO = 12V IC = 0.2A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ (VCE / IC) * Maximum Working Voltage Min. Typ. 400M Max. 12 0.2 0.36 Units V A Hz W This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Se.

2N3011 : MAXIMUM RATINGS Rating Collector-Emitter Voltaged) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Peak (10 /us Pulse) Total Device Dissipation (»T/\ = 25°C Derate above 25°C Total Device Dissipation (d Jq = 25°C TC = 100°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol v CEO VCES vCBO v EBO •c PD Pd Tj, T st g Value 12 30 30 5.0 200 500 0.36 2.06 1.20 0.68 6.85 - 65 to + 200 Unit Vdc Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C ELECTRICAL CHARACTERISTICS TA = 25°C unless otherwise noted. Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) 0c = 10 mAdc, lg = 0) Collector-Emitter Breakd.

2N3012 : Dimensions in mm (inches). m o .c U 4 t e e h S a at .D w w w 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 2N3012 Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 1 – Emitter Parameter VCEO* IC(CONT) hFE ft Test Conditions @ 0.5/30m (VCE / IC) m W o .c U * Maximum Working Voltage 4 t e e h This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. S a at .D w w Semelab plc. w PD 0.36 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk m o .c U 4 t e e h S a t a .D w w w VCEO = 12V IC = 0.2A 3 1 2 Bipolar PNP Device. All.

2N3012 : BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (µA) (V) MIN MIN MIN MAX *ICES **ICEV hFE @ IC @ VCE VCE (SAT) @ IC Cob fT NF ton (mA) (V) (V) (mA) (pF) (MHz) (dB) (ns) MIN MAX MAX MAX MIN MAX MAX toff (ns) MAX 2N2896 NPN AMPL/SWITCH 140 2N2897 NPN AMPL/SWITCH 60 2N2906A PNP AMPL/SWITCH 60 2N2907A PNP AMPL/SWITCH 60 2N2952 NPN AMPL/SWITCH 60 2N3009 NPN SAT SWITCH 40 2N3011 NPN SAT SWITCH 30 2N3012 PNP SAT SWITCH 12 2N3013 NPN SAT SWITCH 40 2N3014 NPN SAT SWITCH 40 2N3073 PNP AMPL/SWITCH 60 2N3115 NPN AMPL/SWITCH 20 2N3116 NPN AMPL/SWITCH 20 2N3117 NPN AMPL/SWITCH 60 2N3121 PNP AMPL/SWITCH 45 2N3135 PNP AMPL/SWITCH 50 2N3136 PNP AMPL/SWITCH 50 2N3209 PNP SAT SWITCH 20 2N3210 NPN SAT SWITCH 40.

2N3012 : 2N3012 CASE 22-03, STYLE 1 TO-18 (TO-206AA) SWITCHING TRANSISTOR PNP SILICON Refer to 2N869A for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a TA = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol v CEO vCBO VEBO 'C PD Pd Tj, Tst g Value 12 12 4.0 200 0.36 2.06 1.2 6.85 -65 to +200 Unit Vdc Vdc Vdc mAdc Watts mW/°C Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Oc = 10 |j.Adc, Vbe = 0) Col.

2N3012CSM : Dimensions in mm (inches). 0.51 ± 0.10 (0.02 ± 0.004) 2.54 ± 0.13 (0.10 ± 0.005) m o .c U 4 t e e h S a at .D w w w 0.31 rad. (0.012) 2N3012CSM 3 2 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) 1 – Base Parameter VCEO* IC(CONT) hFE ft Test Conditions @ 0.5/30m (VCE / IC) m W o .c U * Maximum Working Voltage 4 t e e h This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. S a at .D w w Semelab plc. w PD 0.36 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk m o .c U 4 t e e h S a t a .D w w w 1 0.76 ± 0.15 (0.03 ± 0.006) 0.31 rad. (0.012) A A= 1.02 ± 0.10 (0.04 ± 0.004) 1.40 (.

2N3013 : 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 .

2N3013 : .




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