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STF32NM50N Datasheet PDF


Part Number STF32NM50N
Manufacturer STMicroelectronics
Title N-channel MOSFET
Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates ...
Features TAB Order codes STB32NM50N STF32NM50N STP32NM50N STW32NM50N


■ VDS RDS(on) max. ID PTOT 190 W 35 W 190 W 190 W 2 3 1 3 1 2 D²PAK TAB 500 V 0.13 Ω TO-220FP 22 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220 3 1 2 2 1 3 TO-247 Applicat...

File Size 606.77KB
Datasheet STF32NM50N PDF File








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STF32NM50N : ·Drain Current: ID= 22A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 22 A ID(puls) Pulse Drain Current 88 A Ptot Total Dissipation@TC=25℃ 35 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.6 ℃/W STF32NM50N is.




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