Part Number STP32N65M5
Manufacturer STMicroelectronics
Title N-channel MOSFET
Description These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ h...
Features TAB 3 12 TO-220FP ) TAB t(s 3 c 2 TO-220 1 rodu D(2, TAB) lete P G(1) roduct(s) - Obso S(3) I2PAK 1 2 3 3 12 TO-247 Order codes VDS at Tjmax. RDS(on) max. ID STF32N65M5 STI32N65M5 STP32N65M5 710 V 119 mΩ 24 A STW32N65M5
• Extremely low RDS(on)
• Low gate charge and input capacitance
• E...

File Size 817.05KB
Datasheet STP32N65M5 PDF File

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STP32N65M5 : ·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 650 V ±25 V 24 A 96 A 150 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.83 UNIT ℃/W STP32N65M5 isc 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor STP32N65M5 ELECTRICAL CHARACTERISTICS TC=25℃ unless oth.

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