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2SC2750


Part Number 2SC2750
Manufacturer INCHANGE
Title Silicon NPN Power Transistor
Description ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High Current Capability ·High Power Dissipation ·Minimum Lot-to-Lot variations for ...
Features tor-Emitter Sustaining Voltage IC= 50mA; IB1= 0 100 V VCE(sat) VBE(sat) ICBO ICER ICEX IEBO Collector-Emitter Saturation Voltage IC= 10A; IB= 1A Base-Emitter Saturation Voltage IC= 10A; IB= 1A Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current V...

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2SC2750 : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

2SC2751 : ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·High Current Capability ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high current switching industrial applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7.5 A 120 W 150 ℃ Tstg Storage Temperature Range -55~150.

2SC2751 : ·With TO-3N package ·High voltage ,high speed APPLICATIONS ·For use in high voltage ,high speed and power switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 15 30 7.5 120 150 -55~150 UNIT V V V A A A W www.DataSheet4U.com SavantIC Semiconductor Product Specification Silicon.

2SC2752 : .

2SC2752 : ·High breakdown voltage ·Complementary to 2SA1156 PNP transistor ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SC2752 is suitable for low power switching regulator, DC-DC converter and high voltage switch. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCER Collector-Emitter Voltage RBE=150Ω 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous PC Collector Power Dissipation @ Tc=25℃ TJ Junction Temperature 0.5 A 10 W -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2752 isc .

2SC2752 : ·With TO-126 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·Low power switching regulator ·DC-DC converter ·High voltage switch PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 0.5 1.0 0.25 1.0 W UNIT V V V A A A SavantIC Semiconductor www.DataSheet4U.com Produc.

2SC2753 : TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 2SC2753 VHF~UHF Band Low Noise Amplifier Application Unit: mm · Low noise figure, high gain · NF = 1.5dB, |S21e|2 = 16dB (f = 500 MHz) · NF = 1.7dB, |S21e|2 = 10.5dB (f = 1 GHz) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 17 12 3 70 30 300 150 -55~125 Unit V V V mA mA mW °C °C Microwave Characteristics (Ta = 25°C) JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1E Weight: 0.21 g (typ.) Characteristics Transi.

2SC2754 : ) ) ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC2754 HIGH FREQUENCY AMPLIFIER APPLICATIONS, LOW FREQUENCY AMPLIFIER APPLICATIONS, HIGH SPEED SWITCHING APPLICATIONS. Unit in mm . High Transition Frequency : f T=400MHz(Typ. . Low VcE(sat) : V CE ( sat) =0. 5V(Max. . Small Collector Output Capacitance : C b=3. 5pF(Max. . High Speed Switching. . Designed for Complementary Use with 2SA1164. MAXIMUM RATINGS (Ta=2 5°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 35 Collector-Emitter Voltage VCEO 30 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation VEBO ic IB PC 100 mA 50 mA 200 mW 1. EMITTER 2. COLLECTOR 3. BASE Junction.

2SC2756 : .

2SC2756R : .

2SC2757 : ·Low Noise ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator, mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 50 mA 0.15 W 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC2757 ELECTRICAL .

2SC2759 : ·Low Noise ·High Conversion Gain Gcb= 12.5dB TYP. @IE= -5mA, VCB= 10V APPLICATIONS ·Designed for use in VHF RF amplifier, local oscillator,mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 30 V 14 V 3V 50 mA 0.15 W 125 ℃ -55~125 ℃ isc website:www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC2759 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS M.




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