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2SA470 Datasheet PDF


Part Number 2SA470
Manufacturer ETC
Title Transistor
Description           2SA460 2SA461 2SA462 2SA463 2SA464 2SA465 2SA466 2SA467 2SA468 2SA469 Mitsubishi RF,Osc Mitsubishi RF,Mix,Os c Mitsubishi RF Mitsu...
Features 5℃) Icbo またはhfe (μA) Vcb(V) Vce (V) Ic (mA) -30 -20 - - - -30 -20 - - - -30 -20 - - - -30 -20 - - - -10 -15 - - - -13 -10 - - - -12 -18 - - - -0.1 -40 70- -1 -100 -12 -18 - - - -12 -18 - - - -12 -18 - - - -12 -18 - - - -12 -18 - - - -1 -20 70- ...

File Size 38.83KB
Datasheet 2SA470 PDF File








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2SA-10 : Sentron’s new magnetic angular sensor 2SA-10 detects the absolute angular position of a small magnet that is positioned above the device surface. The 2SA-10 is an integrated combination of a CMOS Hall circuit and a thin ferromagnetic disk. The CMOS circuit contains two pairs of Hall-elements for each of the two directions parallel with the chip.

2SA0683 : Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −50 −5 −1 −1.5 1 150 −55 to +150 V A A W °C °C V Unit V 0.45+0.2 –0.1 (1.27) 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384 5.9±0.2 4.9±0.2 0.45+0.2 –0.1 (1.27) 1 2 3 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature St.

2SA0684 : Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating −30 −60 −25 −50 −5 −1 −1.5 1 150 −55 to +150 V A A W °C °C V Unit V 0.45+0.2 –0.1 (1.27) 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384 5.9±0.2 4.9±0.2 0.45+0.2 –0.1 (1.27) 1 2 3 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature St.

2SA0719 : (planed maintMeaniantnecneatnycpee/,Dimsaciontnteinnaunecdeitnyclpue,deplsafnolleodwdiinsgc foontiurnuPreoddtyucptelidf,edciysccloentsitnaugee.dDisMcaionnttiennuaendtype)ce/ Transistors This product complies with the RoHS Directive (EU 2002/95/EC). 2SA0719 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317  Features  Complementary pair with 2SC1317  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage tem.

2SA0720 : Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 ■ Features • Complementary pair with 2SC1317 and 2SC1318 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) 2SA0719 2SA0720 VCBO −30 −60 Collector-emitter voltage 2SA0719 VCEO (Base open) 2SA0720 −25 −50 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VEBO IC ICP PC Tj Tstg −5 −500 −1 625 150 −55 to +150 Unit V V V mA A mW °C °C 5.0±0.2 Unit: mm 4.0±0.2 .

2SA0720A : Transistor 2SA0720A (2SA720A) Silicon PNP epitaxial planer type For low-frequency driver amplification Complementary to 2SC1318A I Features G High collector to emitter voltage VCEO. G Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. I Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –80 –70 –5 –1 – 0.5 625 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 13.5±0.5 5.1±0.2 5.0±0.2 Unit: mm 4.0±0.2 +0.2 0.45 –0.1 1.27 +0.2 0.45 –0.1.

2SA0777 : Transistors 2SA0777 (2SA777) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1509 ■ Features • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier. ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC ICP PC Tj Tstg −80 −80 −5 − 0.5 −1 1 150 −55 to +150 Unit V V V A A W °C °C 5.9±0.2 Unit: mm 4.9±0.2 8.6±0.2 0..

2SA0794 : Power Transistors 2SA0794 (2SA794), 2SA0794A (2SA794A) Silicon PNP epitaxial planar type For low-frequency output driver Complementary to 2SC1567, 2SC1567A ■ Features • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installa- tion to the heat sink ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) 2SA0794 VCBO 2SA0794A −100 −120 Collector-emitter voltage 2SA0794 VCEO (Base open) 2SA0794A −100 −120 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power di.

2SA0794A : Power Transistors 2SA0794 (2SA794), 2SA0794A (2SA794A) Silicon PNP epitaxial planar type For low-frequency output driver Complementary to 2SC1567, 2SC1567A ■ Features • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installa- tion to the heat sink ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) 2SA0794 VCBO 2SA0794A −100 −120 Collector-emitter voltage 2SA0794 VCEO (Base open) 2SA0794A −100 −120 Emitter-base voltage (Collector open) Collector current Peak collector current Collector power di.

2SA0838 : Transistors 2SA0838 (2SA838) Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC1359 ■ Features • High transfer ratio fT ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC PC Tj Tstg −30 −20 −5 −30 250 150 −55 to +150 Unit V V V mA mW °C °C 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2 0.7±0.2 12.9±0.5 0.7±0.1 0.45+–00..115 2.5+–00..26 2.5+–00..26 0.45+–00..115 1 23 1 : Emitter 2 : Collector 3 : Base TO-92-B1 Package (planed ma.

2SA0879 : Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features • High collector-emitter voltage (Base open) VCEO 0.7+0.3 –0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −250 −200 −5 −70 −100 1 150 −55 to +150 Unit V V V mA mA W °C °C 1 2 3 0.45+0.2 –0.1 (1.27) 13.5±0.5 0.45+0.2 –0.1 (1.27) 8.6±0.2 2.54±0.15 1 : Emitter 2 .

2SA0885 : Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 ■ Features • Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation to the heat sink 8.0+0.5 –0.1 φ 3.16±0.1 3.8±0.3 11.0±0.5 3.2±0.2 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −45 −35 −5 .

2SA0886 : Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −50 −40 −5 −1.5 −3 1.2 150 −55 to +150 Unit V 4.6±0.2 0.75±0.1 0.5±0.1 0.5±0.1 2.3±0.2 3 1.76±0.1 V V A A W °C °C 1 2 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage.

2SA100 : www.DataSheet4U.com www.DataSheet4U.com .

2SA1001 : ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -8 A 80 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHA.

2SA1002 : ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1002 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELE.

2SA1003 : ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 120 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SA1003 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELE.




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