IRF540NPbF Datasheet

IRF540NPbF Power MOSFET

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the des.

Features

GS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient www.irf.com PD - 94812 IRF540NPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 44mΩ ID = 33A S TO-220AB Max. 33 23 110 130 0.87 ± 20 16 13 7.0 -55 to + 175 300 (1.6mm from case ) 10 lbf
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