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FZT2222A

Zetex Semiconductors

SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR

SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 40 Volt VCEO * Fast switching COMPLEMEN...


Zetex Semiconductors

FZT2222A

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SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR ISSUE 3 - OCTOBER 1995 FEATURES * 40 Volt VCEO * Fast switching COMPLEMENTARY TYPE PARTMARKING DETAIL FZT2907A FZT2222A FZT2222A C E C B SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg VALUE 75 40 5 600 2 -55 to+150 UNIT V V V 10 10 10 10 0.3 1.0 nA nA nA V V V V CONDITIONS. IC=10µA, IE=0 IC=10mA, IB=0 * IE=10µA, IC=0 VCB=50V, IE=0 VCB=50V, IE=0, Tamb=150°C VEB=3V, IC=0 VCE=60V, VEB(off)=3V IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=150mA, IB=15mA* IC=500mA, IB=50mA* IC=0.1mA, VCE=10V* IC=1mA, VCE=10V * IC=10mA, VCE=10V* IC=10mA, VCE=10V,Tamb=-55°C* IC=150mA, VCE=10V* IC=150mA, VCE=1V* IC=500mA, VCE=10V* UNIT V V V mA W °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICEX VCE(sat) VBE(sat) hFE 0.6 35 50 75 35 100 50 40 75 40 6 VALUE MIN. MAX. ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). µA 1.2 2.0 300 *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon reques...




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