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MCR100-8

Transys

TO-92 Plastic-Encapsulated Transistors

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors MCR 100- 6, - 8 Silicon Planar PNPN Thyristor TO-92...


Transys

MCR100-8

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Description
Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors MCR 100- 6, - 8 Silicon Planar PNPN Thyristor TO-92 1. KATHODE FEATURES 2. GATE Current-IGT: ITRMS: VDRM: 200 0.8 MCR100-6: MCR100-8: µA A 400 V 600 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 3. ANODE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) 123 Parameter Symbol Test conditions MIN MAX On state voltage * VTM ITM=1A 1.7 Gate trigger voltage Peak Repetitive forward and reverse blocking voltage MCR100-6 MCR100-8 Peak forward or reverse blocking Current Holding current VGT VDRM AND VRRM IDRM IRRM IH VAK=7V 0.8 IDRM= 10 µA ,VMAX=1010 V VAK= Rated VDRM or VRRM IHL= 20 mA , Av = 7 V 400 600 10 5 A2 5 15 Gate trigger current A1 IGT A VAK=7V 15 30 30 80 UNIT V V V µA mA µA µA µA B 80 200 µA * Forward current applied for 1 ms maximum duration, duty cycle≤1%. Typical Characteristics MCR100-6,-8 ...




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