SSFP8N90 Datasheet

SSFP8N90 Power MOSFET

StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.

Features

① dv/dt Peak Diode Recovery dv/dt ③ TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Max. 6.3 3.8 25 171 1.37 ±30 170 2.2 8.5 4.0
  –55 to +150 300(1.6mm from case) 10 Ibf
●in(1.1N
●m) Units A W W/ْ C V mJ A mJ V/ns ْC Thermal Resistance Parameter Min. Typ. Max. RθJC Junction-to-case — — 0.73 RθCS Case-to-Sink,Flat,Greased Surface — 0.5 － RθJA Junction-to-Ambient — — 62.5 Units ْC/W 1 SSFP8N90 StarMOST Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min.