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TYN810RG

STMicroelectronics

10A SCR

® STANDARD Table 1: Main Features Symbol Value IT(RMS) 10 VDRM/VRRM 400, 600 and 800 IGT 15 Unit A V mA TYNx...


TYN810RG

STMicroelectronics


Octopart Stock #: O-919192

Findchips Stock #: 919192-F

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Description
® STANDARD Table 1: Main Features Symbol Value IT(RMS) 10 VDRM/VRRM 400, 600 and 800 IGT 15 Unit A V mA TYNx10 Series 10A SCR A G K A DESCRIPTION The TYNx10 Silicon Controlled Rectifiers is a high performance glass passivated technology. This general purpose Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resi
More View stive or inductive load. K A G TO-220AB Table 2: Order Codes Part Numbers TYN410RG TYN610RG TYN810RG Marking TYN410 TYN610 TYN810 Table 3: Absolute Ratings (limiting values) Symbol Parameter IT(RMS) RMS on-state current (180° conduction angle) Tc = 100°C IT(AV) Average on-state current (180° conduction angle) Tc = 100°C ITSM Non repetitive surge peak on-state current tp = 8.3 ms tp = 10 ms Tj = 25°C I²t I²t Value for fusing tp = 10 ms Tj = 25°C dI/dt Critical rate of rise of on-state current IG = 100 mA , dIG/dt = 0.1 A/µs Tj = 125°C IGM Peak gate current tp = 20 µs Tj = 125°C PG(AV) Average gate power dissipation Tj = 125°C PGM Maximum gate power tp = 20 µs Tj = 125°C VDRM VRRM Repetitive peak off-state voltage TYN410 TYN610 TYN810 Tj = 125°C Tstg Storage junction temperature range Tj Operating junction temperature range TL Maximum lead temperature for soldering during 10s at 2mm from case Value 10 6.4 105 100 50 50 4 1 10 400 600 800 - 40 to + 150 - 40 to + 125 260 Unit A A A A2S A/µs A W W V °C °C February 2006 REV. 2 1/6 TYNx10 Series Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) Symbol Test Conditions IGT VGT VD = 12 V (D.C.) RL = 33 Ω MAX. MAX. VGD VD = VDRM RL = 3.3 kΩ Tj = 110°C MIN. tgt VD = VDRM IG = 40 mA dIG/dt = 0.5 A/µs TYP. IH IT = 100 mA Gate open MAX. IL IG = 1.2 x IGT TYP. dV/dt Linear slope up to: VD = 67 % VDRM Gate open Tj = 110°C MIN. VTM ITM = 20 A tp = 380 µs MAX. IDRM IRRM VDRM = VRRM Tj = 25°C Tj = 110°C MAX. tq VD = 67 % VDRM dITM/dt = 30 A/µs ITM = 20 A VR = 25 V dVD/dt = 50 V/µs Tj = 110°C TYP. Table 5: Thermal Resistance Symbol Rth(j-c) Junction to case (D.C.) Rth(j-a) Junction to ambient Parameter Value 15 1.5 0.2 2 30 50 200 1.6 10 2 70 Unit mA V V µs mA mA V/µs V µA mA µs Value Unit 2.5 °C/W 60 °C/W Figure 1: Maximum average power dissipation versus average on-state current P(W) 12 10 α = 180° DC α = 120° 8 α = 90° α = 60° 6 α = 30° 4 360° 2 IT(AV)(A) α 0 0 1 2 3 4 5 6 7 8 9 Figure 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tlead) P(W) 12 α = 180° 10 8 6 4 2 0 0 20 Rth = 6°C/W Rth = 4°C/W Rth = 2°C/W Tcase(°C) Rth = 0°C/W 100 105 110 115 120 Tamb(°C) 125 40 60 80 100 120 140 2/6 TYNx10 Series Figure 3: Average on-state current versus case temperature IT(AV)(A) 12 10 8 6 4 D.C. α = 180° 2 Tcase(°C) 0 0 10 20 30 40 5






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