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IPP100N06S2-05

Infineon Technologies

Power-Transistor

OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C pea...


Infineon Technologies

IPP100N06S2-05

File Download Download IPP100N06S2-05 Datasheet


Description
OptiMOS® Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested IPB100N06S2-05 IPP100N06S2-05 Product Summary V DS R DS(on),max (SMD version) ID 55 V 4.7 mΩ 100 A PG-TO263-3-2 PG-TO220-3-1 Type IPB100N06S2-05 IPP100N06S2-05 Package Ordering Code Marking PG-TO263-3-2 SP0002-18874 PN0605 PG-TO220-3-1 SP0002-18872 PN0605 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse2) E AS I D= 80 A Gate source voltage4) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 100 100 400 810 ±20 300 -55 ... +175 55/175/56 Unit A mJ V W °C Rev. 1.0 page 1 2006-03-13 Parameter Symbol Conditions Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area5) IPB100N06S2-05 IPP100N06S2-05 min. Values typ. Unit max. - - 0.5 K/W - - 62 - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - ...




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