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IPD70N10S3L-12

Infineon Technologies

Power-Transistor

OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C p...


IPD70N10S3L-12

Infineon Technologies


Octopart Stock #: O-919276

Findchips Stock #: 919276-F

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Description
OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPD70N10S3L-12 Product Summary V DS R DS(on),max ID 100 V 11.5 mΩ 70 A PG-TO252-3-11 Type IPD70N10S3L-12 Package Marking PG-
More View TO252-3-11 QN10L12 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25°C, V GS=10V T C=100°C, V GS=10V1) Pulsed drain current1) I D,pulse T C=25°C Avalanche energy, single pulse1) E AS I D=35A Avalanche current, single pulse I AS Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 70 48 280 410 70 ±16 125 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.0 page 1 2008-02-12 IPD70N10S3L-12 Parameter Symbol Conditions Thermal characteristics1) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area2) min. Values typ. Unit max. - - 1.2 K/W - - 62 - - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance V (BR)DSS V GS=0V, I D= 1mA V GS(th) V DS=V GS, I D=83µA I DSS V DS=80V, V GS=0V, T j=25°C V DS=80V, V GS=0V, T j=125°C1) I GSS V GS=16V, V DS=0V R DS(on) V GS=4.5V, I D=70A V GS=10 V, I D=70 A 100 - -V 1.2 1.7 2.4 - 0.01 0.1 µA - 1 10 - - 100 nA - 11.7 15.2 mΩ - 9.6 11.5 Rev. 1.0 page 2 2008-02-12 IPD70N10S3L-12 Parameter Dynamic characteristics1) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics1) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current1) Diode pulse current1) Diode forward voltage Reverse recovery time1) Symbol Conditions C iss C oss Crss t d(on) tr t d(off) tf V GS=0V, V DS=25V, f =1MHz V DD=20V, V GS=10V, I D=70A, R G=3.5Ω Q gs Q gd Qg V plateau V DD=80V, I D=70A, V GS=0 to 10V IS I S,pulse V SD T C=25°C V GS=0V, I F=70A, T j=25°C t rr V R=50V, I F=I S, di F/dt =100A/µs min. Values typ. Unit max. - 4270 5550 pF - 950 1235 - 90 135 - 12 - ns -6- 35 -7- - 16 21 nC - 11 17 - 59 77 - 3.7 - V - - 70 A - - 280 0.6 1 1.2 V - 80 - ns Reverse recovery charge1) Q rr - 185 - nC 1) Defined by design. Not subject to production test. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2008-02






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