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CM3400

CHIMICRON SEMICONDUCTOR

N-Channel Enhancement Mode Power MOSFET

CM3400 N-Channel Enhancement Mode Power MOSFET 30VDS/ ±12VGS/5.8A(ID) Part No CM3400 Description The NCE3400 uses ad...



CM3400

CHIMICRON SEMICONDUCTOR


Octopart Stock #: O-919401

Findchips Stock #: 919401-F

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Description
CM3400 N-Channel Enhancement Mode Power MOSFET 30VDS/ ±12VGS/5.8A(ID) Part No CM3400 Description The NCE3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Application ●PWM applications ●Load switch ●Power management Product Summary VDS=30V ID= 5.8A RDS(ON)< 59mΩ@ VGS=2.5V RDS(ON)< 45mΩ@ VGS=4.5V RDS(ON)< 41mΩ@ VGS=10V D S G SOT-23 Package Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Drain-Source Voltage Gate-Source Voltage VDS 30 VGS ±12 Continuous Current Drain ID 5.8 Pulsed Drain Current(Note 1) IDM 30 Power Description PD 1.4 Operating Junction and Storage Temperature Tj, TSTG Range -55°C to 150°. Units V V A A W ℃ TAIWAN CHIMICRON SEMICONDUCTOR CO., LTD Rev. 1. 3 Dec. 2012 www.chimicron.com [email protected] Page 1 of 3 CM3400 N-Channel Enhancement Mode Power MOSFET Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Drain-to-Source Leakage Current Test Conditions VGS = 0V, ID=-250μA VDS=-24V,VGS=0V IGSS Gate-Body Leakage Current VGS=±12V,VDS=0V On Characteristics (Note 3) Gate Threshold Voltage Drain-Source On-State Resistance Forward Trans conductance Dynamic Characteristics (Note4) Input Capacitance Output Capacitance Reverse Transfer Capaci...




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