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C2062S

Rohm

2SC2062S

www.DataSheet4U.com Transistors 2SC2062S High-gain Amplifier Transistor (32V, 0.3A) 2SC2062S zFeatures 1) Darlingto...


C2062S

Rohm


Octopart Stock #: O-919970

Findchips Stock #: 919970-F

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www.DataSheet4U.com Transistors 2SC2062S High-gain Amplifier Transistor (32V, 0.3A) 2SC2062S zFeatures 1) Darlington connection for a high hFE. (DC current gain = 5000 (Min.) at VCE = 3V, IC = 0.1A.) 2) High input impedance. zAbsolute maximum ratings (Ta=25°C) C B zExternal dimensions (Unit : mm) SPT 4.0 2.0 (15Min.) 3.0 3Min. (1)Emitter (2
More View )Collector (3)Base 0.45 2.5 5.0 (1) (2) (3) 0.5 0.45 Taping specifications E : Emitter C : Collector B : Base E zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCES 40 32 Emitter-base voltage Collector current Collector power dissipation VEBO IC PC 12 0.3 0.3 Junction temperature Tj 150 Storage temperature Tstg −55 to +150 Unit V V V A W °C °C zElectrical characteristics (Ta=25°C) Parameter Symbol Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCES Emitter-base breakdown voltage BVEBO Collector cutoff current ICBO Emitter cutoff current IEBO DC current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) Transition frequency fT Output capacitance ∗ Transition frequency of the device. Cob Min. 40 32 12 − − 10000 − − − Typ. − − − − − − − 200 2.5 Max. − − − 0.1 0.1 − 1.4 − − Unit V V V µA µA − V MHz pF Conditions IC=100µA IC=10mA IE=100µA VCB=30V VEB=12V VCE/IC=3V/0.1A IC/IB=200mA/0.2mA VCE=5V , IE= −10mA , f=100MHz VCB=10V , IE=0A , f=1MHz zPackaging specifications and hFE Type 2SC2062S Package hFE SPT C Code Basic ordering unit (pieces) TP 5000 ∗ Rev.A 1/2 www.DataSheet4U.com Transistors COLLECTOR CURRENT : Ic (mA) zElectrical characteristics curves 500 Ta=25°C 18 20 16 400 14 12 300 10 8.0 200 6.0 4.0 100 2.0 0 IB=0µA 0 1.0 2.0 COLLECTOR - EMITTER VOLTAGE : VCE (V) Fig.1 Typical output characteristics ( Ι ) COLLECTOR CURRENT : Ic (mA) 100 Ta=25°C 2.4 80 2.0 1.8 60 1.6 1.2 40 0.8 20 0.4 0.2 0 IB=0µA 0 1.0 2.0 3.0 4.0 5.0 COLLECTOR - EMITTER VOLTAGE : VCE (V) Fig.2 Typical output characteristics ( ΙΙ ) BASE EMITTER VOLTAGE : VBE(on) (V) 2SA1759 2.2 Ta=25°C 2.0 VCE=5V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1.0 2.0 5.0 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.3 Base emitter 'ON' voltage vs. collector current COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 100k Ta=25°C 100k Ta=25°C 50k 50k VCE=5V VCE=10V Ta=25°C 20k 5V 20k 3V 10k 10k Ta=−55°C 5k 5k 2k 2k 1k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) 1k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) 1.8 Ta=25°C 1.6 IC/IB=1000 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 2.0 5.0 10 20 50 100 200 500 1000 C






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