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2SK383


Part Number 2SK383
Manufacturer Hitachi
Title Silicon N-Channel MOS FET
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Datasheet 2SK383 PDF File








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2SK3800 : MOS FET 2SK3800 Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings Unit VDSS 40 V VGSS ±20 V ID ID (pulse)*1 ±70 ±140 A A PD EAS*2 80 (Tc=25ºC) 400 W mJ Tch 150 ºC Tstg –40 to +150 ºC * 1: PW 100µs, duty cycle 1% * 2: VDD =20V, L =1mH, IL =20A, unclamped, RG =50Ω Electrical Characteristics Symbol Test Conditions V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss td (on) tr td (off) tf VSD trr Rth (ch-c) Rth (ch-a) ID = 100µA, VGS = 0V VGS = ±15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 35A VGS = 10V, ID = 35A VDS = 10V f = 1.0MHz VGS = 0V ID = 35A VDD = 20V, RG = 22Ω RL = 0.57Ω, VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/µs (Ta=25ºC) Rati.

2SK3800 : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 70 A IDM Drain Current-Single Pluse 140 A PD Total Dissipation @TC=25℃ 80 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.56 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specif.

2SK3801 : MOS FET 2SK3801 Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings Unit VDSS VGSS ID ID (pulse)*1 40 ±20 ±70 ±140 V V A A PD EAS*1 100 (Tc=25ºC) 400 W mJ Tch 150 ºC Tstg –40 to +150 ºC * 1: PW 100µs, duty cycle 1% * 2: VDD =20V, L =1mH, IL =20A, unclamped, RG =50Ω Electrical Characteristics Symbol Test Conditions V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss td (on) tr td (off) tf VSD trr Rth (ch-c) Rth (ch-a) ID =100µA, VGS =0V VGS =±15V VDS =40V, VGS =0V VDS =10V, ID =1mA VDS =10V, ID =35A VGS =10V, ID =35A VDS =10V f =1.0MHz VGS =0V ID =35A VDD =20V, RG =22Ω RL =0.57Ω, VGS =10V ISD =50A, VGS =0V ISD =25A, di/dt =50A/µs (Ta=25ºC) Ratings min typ max Unit 40.

2SK3801 : ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 70 A IDM Drain Current-Single Pluse 140 A PD Total Dissipation @TC=25℃ 100 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise speci.

2SK3803 : MOS FET 2SK3803 (under development) Absolute Maximum Ratings (Ta=25ºC) Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*2 Tch Tstg Ratings 40 ±20 ±85 ±170 100 (Tc=25ºC) 730 150 –55 to +150 Unit V V A A W mJ ºC ºC * 1: PW 100µs, duty cycle 1% * 2: VDD =20V, L =1mH, IL =20A, unclamped, RG =50Ω Electrical Characteristics Symbol Test Conditions V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss td (on) tr td (off) tf VSD trr ID = 100µA, VGS = 0V VGS = ±15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 42A VGS = 10V, ID = 42A VDS = 10V f = 1.0MHz VGS = 0V ID = 42A VDD = 20V, RG = 22Ω VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/µs (Ta=25ºC) Ratings min typ max Unit 40 .

2SK3804-01S : Symbol Characteristics Unit Remarks Drain-Source Voltage VDS 75 VDSX 40 Continuous Drain Current ID ±70 Pulsed Drain Current IDP ±280 Gate-Source Voltage VGS ±20 Non-Repetitive Maximum Avalanche current IAS 70 Non-Repetitive Maximum Avalanche Energy EAS 133 Maximum Power Dissipation PD 135 Tch Operating and Storage Temperature range Tstg 150 -55 to +150 Note*1 : Tch≦150℃,See Fig.1 and Fig.2 Note*2 : Starting Tch=25℃,L=25μH,VCC=48V,RG=50Ω,See Fig.1 and Fig.2 EAS limited by maximum channel temperature and avalanche current. See to Avalanche Energy graph of page 4 ■Electrical Characteristics at Tc=25℃(unless otherwise specified) Static Ratings V V VGS=-20V A A.

2SK3804-01S : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 70 A IDM Drain Current-Single Pluse 280 A PD Total Dissipation @TC=25℃ 135 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.926 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO.

2SK381 : www.DataSheet4U.com .

2SK3811 : The 2SK3811 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3811-ZP PACKAGE TO-263 (MP-25ZP) FEATURES • Super low on-state resistance RDS(on) = 1.8 mΩ MAX. (VGS = 10 V, ID = 55 A) • High Current Rating: ID(DC) = ±110 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±110 ±440 213 1.5 150 −55 to +150 518 72 518 V V A A W W °C °C mJ A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Stora.

2SK3811-ZP : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 110 A IDM Drain Current-Single Pluse 440 A PD Total Dissipation @TC=25℃ 213 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.587 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMB.

2SK3812 : The 2SK3812 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3812-ZP PACKAGE TO-263 (MP-25ZP) FEATURES • Super low on-state resistance RDS(on)1 = 2.8 mΩ MAX. (VGS = 10 V, ID = 55 A) RDS(on)2 = 3.7 mΩ MAX. (VGS = 4.5 V, ID = 55 A) • High current rating: ID(DC) = ±110 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 (TO-263) 60 ±20 ±110 ±440 213 1.5 150 −55 to +150 397 63 397 V V A A W W °C °C mJ A mJ VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg Total Power Dissipation (TC = 25°C) Total Power D.

2SK3812-ZP : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 110 A IDM Drain Current-Single Pluse 440 A PD Total Dissipation @TC=25℃ 213 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 0.587 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMB.

2SK3813 : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pluse 240 A PD Total Dissipation @TC=25℃ 84 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.49 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL .

2SK3813 : The 2SK3813 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3813 2SK3813-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES • Super low on-state resistance RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 7.1 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low C iss: C iss = 5500 pF TYP. (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 40 ±20 ±60 ±240 84 1.0 150 −55 to +150 137 37 137 V V A A W W °C °C mJ A mJ (TO-252) Total Power Dissipation (T.

2SK3813-Z : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pluse 240 A PD Total Dissipation @TC=25℃ 84 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.49 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL .

2SK3814 : ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 60 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 60 A IDM Drain Current-Single Pluse 240 A PD Total Dissipation @TC=25℃ 84 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 1.49 UNIT ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL .

2SK3814 : The 2SK3814 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3814 2SK3814-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES • Super low on-state resistance RDS(on)1 = 8.7 mΩ MAX. (VGS = 10 V, ID = 30 A) RDS(on)2 = 10.5 mΩ MAX. (VGS = 4.5 V, ID = 30 A) • Low C iss: C iss = 5450 pF TYP. (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 60 ±20 ±60 ±240 84 1.0 150 −55 to +150 102 32 102 V V A A W W °C °C mJ A mJ (TO-252) Total Power Dissipation (.




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