DatasheetsPDF.com

A1645 Datasheet PDF

NEC
Part Number A1645
Manufacturer NEC
Title 2SA1645
Description of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation an...
Features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching power supplies, DC/DC converters, motor drivers, solenoid drivers, and other low-voltage power supply devices, as well as for highcurrent switching. FEATURES
• Fast switching speed
• Low collector-to-e...

File Size 200.61KB
Datasheet PDF File A1645 PDF File


A1645 A1645 A1645




Similar Ai Datasheet

A16-2 : The A16-2 RF amplifier is a discrete thin film hybrid design, which incorporates the use of thin film manufacturing processes for accurate performance and high reliability. This single stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network is used for temperature-stable performance, in addition to an RF Choke, used for power supply decoupling. Both TO-8 and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available. Ordering Information Part Number A16-2 SMA16-2 CA16-2 Package TO-8 Surface Mount SMA Connectorized www.DataSheet4U.com Electrical Specifications.

A1601 : www.DataSheet4U.net .

A1606 : Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications · High-voltage switching, AF power amplifier, 100W output predrivers. Package Dimensions unit:mm 2041 [2SA1606/2SC4159] Features · Micaless package facilitating mounting. ( ) : 2SA1606 E : Emitter C : Collector B : Base SANYO : TO-220ML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Rating.

A1607 : Ordering number:EN2479A Features · Fast switching speed. · High gain-bandwidth product. · Low saturation voltage. PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Package Dimensions unit:mm 2018A [2SA1607/2SC4168] ( ) : 2SA1607 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cutoff Current Emitter Cutoff Current DC Cu.

A1608 : .

A1608 : SMD Type Features High fT: fT=400MHz. PNP Silicon Epitaxia 2SA1608 TransistIoCrs Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -40 -5 -500 150 150 -55 to +150 Unit V V V mA mW 1 Emitter 2 Base 3 Collector Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2.

A1615 : of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. • While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks o.

A1620 : 2SA1620 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1620 Audio Frequency Amplifier Applications Complementary to 2SC4209 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −80 −80 −5 −300 −60 200 150 −55~150 V V V mA mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliabili.

A1624 : Ordering number : 3 1 0 3 A 2SA1624 PNP Epitaxial Planar Silicon Transistor Color TV Chroma Output, High-Voltage Driver Applications .

A1625 : .

A1625 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1625 TRANSISTOR (PNP) FEATURES z High Voltage z High Speed Switching z Low Collector Saturation Voltage TO – 92 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -400 -400 -7 -500 750 166 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-ba.

A1625 : Transistors 2SA1625 .

A1626 : .

A1627 : .

A1633 : www.DataSheet4U.com .

A1641 : www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .

A1642 : The A1642 is an optimized Hall-effect sensing integrated circuit that provides a user-friendly solution for true zero-speed digital ring-magnet sensing in two-wire applications. This small package can be easily assembled and used in conjunction with a wide variety of target shapes and sizes. The integrated circuit incorporates dual Hall-effect elements and signal processing that switches in response to differential magnetic signals created by ring magnet poles. The circuitry contains a sophisticated digital circuit to reduce system offsets, to calibrate the gain for air-gap–independent switch points, and to achieve true zero-speed operation. Signal optimization occurs at power-on through the.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)