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SSF2122E

GOOD-ARK
Part Number SSF2122E
Manufacturer GOOD-ARK
Description 20V Dual N-Channel MOSFET
Published Jan 14, 2016
Detailed Description Main Product Characteristics VDSS 20V RDS(on) 15.2mohm(typ.) ID 7A ① DFN 3x3-8L Features and Benefits  Advanced M...
Datasheet PDF File SSF2122E PDF File

SSF2122E
SSF2122E


Overview
Main Product Characteristics VDSS 20V RDS(on) 15.
2mohm(typ.
) ID 7A ① DFN 3x3-8L Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature  Lead free product SSF2122E 20V Dual N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V(Silicon Limited) Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max.
7① 5① 42 1.
4 20 ± 12 -55 to + 150 Units A W V V °C www.
goodark.
com Page 1 of 8 Rev.
1.
0 SSF2122E 20V Dual N-Channel MOSFET Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min.
20 — — — — 0.
5 — — — — — — — — — — — — — — Typ.
— 15.
2 15.
9 17.
6 20.
8 — 0.
30 — — — 24.
1 1.
4 4.
2 5.
3 18.
2 25 3 681 124 117 Max.
— 23 24 30 35 1 — 1 10 -10 — — — — — — — — — — Units V mΩ V μA μA nC Conditions VGS = 0V, ID = 250μA VGS=4.
5V,ID...


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