PD - 97309A IRFP4410ZPbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characteriz.
rew
Avalanche Characteristics
EAS (T hermally limited) IAR EAR
dSingle Pulse Avalanche Energy ÃAvalanche Current fRepetitive Avalanche Energy
Thermal Resistance
Symbol RπJC
Parameter
jJu n ctio n- to- Ca se
RπCS RπJA
Case-to-Sink, Flat Greased Surface
jJu n ctio n- to- A mb ie nt
www.irf.com
Max. 97 69 390 230 1.5 ± 20 16
-55 to + 175
300
x x10lb in (1.1N m)
242 See Fig. 14, 15, 22a, 22b,
Typ.
–
–
– 0.24
–
–
–
Max. 0.65
–
–
– 40
Units A W
W/°C V
V/ns °C
mJ A mJ
Units °C/W
1
03/07/08
IRFP4410ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
V(BR)DSS ∆V(BR).
Similar Product