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KDV258E


Part Number KDV258E
Manufacturer KEC
Title Silicon Diode
Description SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Min.) Low Series Resistance : rs=0.45 (Max.) KD...
Features High Capacitance Ratio : C1V/C4V =2.0(Min.) Low Series Resistance : rs=0.45 (Max.) KDV258E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CE 1 CATHODE MARK B A MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg ...

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KDV258 : SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND. FEATURES High Capacitance Ratio : C1V/C4V =2.0(Min.) Low Series Resistance : rs=0.45 (Max.) MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 15 150 -55 150 UNIT V KDV258 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK E A K F L B 1 G H 2 D MM 1. ANODE 2. CATHODE J C I DIM MILLIMETERS A 2.50 +_ 0.1 B 1.25+_ 0.05 C 0.90 +_0.05 D 0.30+0.06/-0.04 E 1.70 +_ 0.05 F MIN 0.17 G 0.126 +_ 0.03 H 0~0.1 I 1.0 MAX J 0.15 +_0.05 K 0.4 +_0.05 L 2 +4/-2 M 4~6 USC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage R.




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