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2N6312 Datasheet PDF


Part Number 2N6312
Manufacturer Central Semiconductor
Title SILICON TRANSISTORS
Description The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process,...
Features E=50V (2N4232A, 2N6313) ICEO VCE=70V (2N4233A, 2N6314) ICEV VCE=Rated VCEO, VBE=1.5V ICEV VCE=Rated VCEO, VBE=1.5V, TC=150°C IEBO VEB=5.0V BVCEO IC=100mA, (2N4231A, 2N6312) 40 BVCEO IC=100mA, (2N4232A, 2N6313) 60 BVCEO IC=100mA, (2N4233A, 2N6314) 80 VCE(SAT) IC=1.5A, IB=0.15A VCE(SAT...

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2N6312 : ·With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6312 2N6313 2N6314 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6312 VCBO Collector-base voltage 2N6313 2N6314 2N6312 VCEO Collector-emitter voltage 2N6313 2N6314 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -5 -10 -2 75 20.

2N6312 : 2N6312 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar PNP Device in a Hermetically sealed TO66 Metal Package. Bipolar PNP Device. VCEO = 40V IC = 5A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 1 – Base TO66 (TO213AA) PINOUTS 2 – Emitter Case – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions @ 4/1.5 (VCE / IC) * .

2N6313 : ·With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6312 2N6313 2N6314 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6312 VCBO Collector-base voltage 2N6313 2N6314 2N6312 VCEO Collector-emitter voltage 2N6313 2N6314 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -5 -10 -2 75 20.

2N6313 : The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 2N4231A 2N4232A 2N4233A SYMBOL 2N6312 2N6313 2N6314 VCBO 40 60 80 VCEO 40 60 80 VEBO 5.0 IC 5.0 ICM 10 IB 2.0 PD 75 TJ, Tstg -65 to +200 JC 2.32 UNITS V V V A A A W °C °C/.

2N6314 : ·With TO-66 package ·Low collector saturation voltage ·Low leakage current APPLICATIONS ·Designed for general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6312 2N6313 2N6314 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N6312 VCBO Collector-base voltage 2N6313 2N6314 2N6312 VCEO Collector-emitter voltage 2N6313 2N6314 VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -40 -60 -80 -40 -60 -80 -5 -5 -10 -2 75 20.

2N6314 : The CENTRAL SEMICONDUCTOR 2N4231A, 2N6312 series devices are complementary silicon power transistors, manufactured by the epitaxial base process, designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 2N4231A 2N4232A 2N4233A SYMBOL 2N6312 2N6313 2N6314 VCBO 40 60 80 VCEO 40 60 80 VEBO 5.0 IC 5.0 ICM 10 IB 2.0 PD 75 TJ, Tstg -65 to +200 JC 2.32 UNITS V V V A A A W °C °C/.

2N6315 : These 2N6315 and 2N6316 devices are an excellent choice for un-tuned amplifier applications. It is also ideal for general purpose power switch and amplifier applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Hermetically sealed. • Complimentary pairing with the PNP 2N6317 and 2N6318. • RoHS compliant versions available. TO-213AA (TO-66) Package APPLICATIONS / BENEFITS • Convenient package. • Mechanically rugged. • Commercial, industrial, and military uses. MAXIMUM RATINGS @ 25 ºC unless otherwise stated Parameters/Test Con.

2N6315 : The CENTRAL SEMICONDUCTOR 2N6315 series devices are complementary silicon power transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. TO-66 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6315 2N6317 60 2N6316 2N6318 80 60 80 5.0 7.0 15 2.0 90 -65 to +200 1.95 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMB.

2N6315 : MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 2N6315 2N6317 6.35 (0.250) 8.64 (0.340) COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS COMPLEMENTARY TRANSISTORS 2N6315 (NPN) AND 2N6317 (PNP) 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RAT.

2N6316 : These 2N6315 and 2N6316 devices are an excellent choice for un-tuned amplifier applications. It is also ideal for general purpose power switch and amplifier applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Hermetically sealed. • Complimentary pairing with the PNP 2N6317 and 2N6318. • RoHS compliant versions available. TO-213AA (TO-66) Package APPLICATIONS / BENEFITS • Convenient package. • Mechanically rugged. • Commercial, industrial, and military uses. MAXIMUM RATINGS @ 25 ºC unless otherwise stated Parameters/Test Con.

2N6316 : The CENTRAL SEMICONDUCTOR 2N6315 series devices are complementary silicon power transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. TO-66 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6315 2N6317 60 2N6316 2N6318 80 60 80 5.0 7.0 15 2.0 90 -65 to +200 1.95 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMB.

2N6317 : These 2N6317 and 2N6318 devices are an excellent choice for un-tuned amplifier applications. It is also ideal for general purpose power switch and amplifier applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Hermetically sealed. • Complimentary pairing with the NPN 2N6315 and 2N6316. • RoHS compliant versions available. TO-213AA (TO-66) Package APPLICATIONS / BENEFITS • Convenient package. • Mechanically rugged. • Commercial, industrial, and military uses. MAXIMUM RATINGS @ 25 ºC unless otherwise stated Parameters/Test Con.

2N6317 : The CENTRAL SEMICONDUCTOR 2N6315 series devices are complementary silicon power transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. TO-66 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6315 2N6317 60 2N6316 2N6318 80 60 80 5.0 7.0 15 2.0 90 -65 to +200 1.95 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMB.

2N6317 : MECHANICAL DATA Dimensions in mm (inches) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 2N6315 2N6317 6.35 (0.250) 8.64 (0.340) COMPLEMENTARY SILICON MEDIUM POWER TRANSISTORS COMPLEMENTARY TRANSISTORS 2N6315 (NPN) AND 2N6317 (PNP) 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) Pin 1 –Base TO–66 (TO-213AA) Pin 2 –Emitter Case – Collector FEATURES • Low Collector Emitter Saturation Voltage • Low Leakage Current • Excellent DC Current Gain APPLICATIONS: Designed for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RAT.

2N6318 : These 2N6317 and 2N6318 devices are an excellent choice for un-tuned amplifier applications. It is also ideal for general purpose power switch and amplifier applications. Microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Hermetically sealed. • Complimentary pairing with the NPN 2N6315 and 2N6316. • RoHS compliant versions available. TO-213AA (TO-66) Package APPLICATIONS / BENEFITS • Convenient package. • Mechanically rugged. • Commercial, industrial, and military uses. MAXIMUM RATINGS @ 25 ºC unless otherwise stated Parameters/Test Con.

2N6318 : The CENTRAL SEMICONDUCTOR 2N6315 series devices are complementary silicon power transistors, mounted in a hermetically sealed metal case, designed for general purpose amplifier and switching applications. TO-66 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6315 2N6317 60 2N6316 2N6318 80 60 80 5.0 7.0 15 2.0 90 -65 to +200 1.95 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMB.




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