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BCW65


Part Number BCW65
Manufacturer Central Semiconductor
Title SILICON NPN TRANSISTORS
Description The CENTRAL SEMICONDUCTOR BCW65 and BCW66 series devices are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded i...
Features , TA=150°C IEBO VEB=4.0V BVCBO IC=10μA (BCW65) 60 BVCBO IC=10μA (BCW66) 75 BVCEO IC=10mA (BCW65) 32 BVCEO IC=10mA (BCW66) 45 BVEBO IE=10μA 5.0 VCE(SAT) IC=100mA, IB=10mA VCE(SAT) IC=500mA, IB=50mA VBE(SAT) IC=100mA, IB=10mA VBE(SAT) IC=500mA, IB=50mA fT VCE=5.0V, IC=50mA, f=20...

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BCW60 : NPN transistor in a SOT23 plastic package. PNP complements: BCW61 series. handbook, halfpage BCW60 series PINNING PIN 1 2 3 base emitter collector DESCRIPTION 3 3 1 MARKING TYPE NUMBER BCW60B BCW60C BCW60D Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C CONDITIONS open emitter open base open collect.

BCW60 : NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP) Type BCW 60 A BCW 60 B BCW 60 C BCW 60 D BCW 60 FF BCW 60 FN BCX 70 G BCX 70 H BCX 70 J BCX 70 K Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs Ordering Code (tape and reel) Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCW 60 BCX 70 Max.

BCW60 : BCW60, BCX70 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) 3 2 1 VPS05161 Type BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX70G BCX70H BCX70J BCX70K Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 1 Jan-29-2002 BCW60, BCX70 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base .

BCW60 : BCW60 Series New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 Top View .056 (1.43) .052 (1.33) 12 .037(0.95) .037(0.95) Pin Configuration 1. Base 2. Emitter 3. Collector Mounting Pad Layout 0.031 (0.8) 0.079 (2.0) 0.035 (0.9) 0.037 (0.95) 0.037 (0.95) max. .004 (0.1) .007 (0.175) .005 (0.125) .045 (1.15) .037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Features • NPN Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary.

BCW60 : BCW60 NPN Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the PNP transistors BCW61 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IBM Ptot TJ TS Value 32 32 5 100 200 200 200 150 -65 to +150 Unit V V V mA mA mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-T.

BCW60 : SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 – AUGUST 1995 PARTMARKING DETAILS BCW60A – AA BCW60B – AB BCW60C – AC BCW60D – AD BCW60AR – CR BCW60BR – DR BCW60CR – AR BCW60DR – BR COMPLEMENTARY TYPE BCW61 BCW60 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PTOT tj:tstg SOT23 VALUE 32 32 5 200 50 330 -55 to +150 UNIT V V V mA mA mW °C FOUR TERMINAL NETWORK DATA (Ic=2mA, VCE=5V, f=1kHz) hFEGroup A hFEGroup B hFE Group C hFEGroup D Min. Typ. Max. Min. Typ. Max. Mi.

BCW60A : .

BCW60A : NPN Silicon AF Transistors BCW 60 BCX 70 q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BCW 61, BCX 71 (PNP) Type BCW 60 A BCW 60 B BCW 60 C BCW 60 D BCW 60 FF BCW 60 FN BCX 70 G BCX 70 H BCX 70 J BCX 70 K Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs Ordering Code (tape and reel) Q62702-C1517 Q62702-C1497 Q62702-C1476 Q62702-C1477 Q62702-C1529 Q62702-C1567 Q62702-C1539 Q62702-C1481 Q62702-C1552 Q62702-C1571 Pin Configuration 1 2 3 B E C Package1) SOT-23 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BCW 60 BCX 70 Max.

BCW60A : BCW60, BCX70 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BCW61, BCX71 (PNP) 3 2 1 VPS05161 Type BCW60A BCW60B BCW60C BCW60D BCW60FF BCW60FN BCX70G BCX70H BCX70J BCX70K Marking AAs ABs ACs ADs AFs ANs AGs AHs AJs AKs 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 1 Jan-29-2002 BCW60, BCX70 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base .

BCW60A : BCW60A,B,C,D MAXIMUM RATINGS CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous THERMAL CHARACTERISTICS Symbol vCEO VCBO vEBO 'C Characteristic 'Total Device Dissipation, TA = 25°C Derate above 25°C Symbol pd Storage Temperature Tstg 'Thermal Resistance Junction to Ambient R 0JA mmJ 'Package mounted on 99.5% alumina 10 x 8 x 0.6 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage flC = 2.0 mAdc, lg = 0) Emitter-Base Breakdown Voltage (IE = 1.0 f(Adc, lc = 0) .

BCW60A : BCW60 Series New Product Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-236AB (SOT-23) .122 (3.1) .110 (2.8) .016 (0.4) 3 Top View .056 (1.43) .052 (1.33) 12 .037(0.95) .037(0.95) Pin Configuration 1. Base 2. Emitter 3. Collector Mounting Pad Layout 0.031 (0.8) 0.079 (2.0) 0.035 (0.9) 0.037 (0.95) 0.037 (0.95) max. .004 (0.1) .007 (0.175) .005 (0.125) .045 (1.15) .037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Features • NPN Silicon Epitaxial Planar Transistors • Suited for low level, low noise, low frequency applications in hybrid cicuits. • Low Current, Low Voltage. • As complementary.

BCW60A : BCW60A/B/C/D BCW60A/B/C/D General Purpose Transistor NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC PC TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector Value 32 32 5 100 350 150 Units V V V mA mW °C ©2002 Fairchild Semiconductor Corporation Rev. B2, December 2002 BCW60A/B/C/D Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCEO BVEBO ICES IEBO hFE Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Colle.

BCW60A : SMD Type NPN General Purpose Transistors BCW60A/B/C/D Transistors IC SOT-23 Unit: mm Features NPN epitaxial silicon transistor. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Storage temperature Symbol VCBO VCEO VEBO IC Pc Tstg Rating 32 32 5 100 350 150 Unit V V V mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type BCW60A/B/C/D Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Em.

BCW60A : Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW60A BCW60B BCW60C BCW60D SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCW60A = AA BCW60B = AB BCW60C = AC BCW60D = AD PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–emitter voltage (VBE = 0) Collector–emitter voltage (open base) Collector current (d.c.) Total power dissipation Junction temperature Transition frequency at f = 100 MHz VCE = 5 V; IC = 10 mA Noise figure at f = 1 kHz VCE = 5V; IC = 200 mA; B = 200Hz VCES VCE0 IC Ptot Tj fT F max. ma.

BCW60A : BCW60A ... BCW60D BCW60A ... BCW60D NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-07-31 Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 2.5 max 1.3±0.1 Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dim1e.9nsions - Maße [mm] 1=B 2=E 3=C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle NPN 250 mW SOT-23 (TO-236) 0.01 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Base-voltage – Kollektor-Basis-Spannung C.

BCW60ALT1 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW60ALT1/D General Purpose Transistors NPN Silicon COLLECTOR 3 1 BASE BCW60ALT1 BCW60BLT1 BCW60DLT1 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and.

BCW60B : .




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