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TIP126 Datasheet PDF


Part Number TIP126
Manufacturer Central Semiconductor
Title Silicon Power darlington Complementary transistors
Description 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 ...
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Datasheet TIP126 PDF File








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TIP120 : TIP120 VCBO VCEO VEBO IC ICM IB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Base Current 60 60 Power Dissipation upto TC=25°C Power Dissipation Derate above TC=25°C PD Power Dissipation upto TA=25°C Power Dissipation Derate above TA=25°C RθJA RθJC TJ, TSTG Thermal Resistance from Junction to Ambient in Free Air Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range TIP121 80 80 5.0 5.0 8.0 120 65 0.52 2.0 16 62.5 1.92 -65 to +150 TIP122 100 100 Unit V V.

TIP120 : PNP/NPN Silicon Power Transistor P b Lead(Pb)-Free FEATURES: * Medium Power Complementary silicon transistors * TIP120,121,122 Darlington TRANSISTOR (NPN) * TIP125,126,127 Darlington TRANSISTOR (PNP) TIP120 Series 1 23 1. BASE 2. COLLECTOR 3. EMITTER TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter TIP120 TIP125 VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage IC Collector Current -Continuous PC R ӨJA R ӨJC TJ Tstg Collector Power Dissipation Thermal Resistance Junction to Ambient Thermal Resistance Junction to Case Junction Temperature Storage Temperature TIP121 TIP126 80 80 5 5 2 62.5 1.92 150 -55-150 TIP122.

TIP120 : MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TIP120 Features • Low collector-emitter saturation voltage • Amplifier applications -emitter shunt resistors • TO-220 compact package • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Maximum Ratings@ Ta=25OC Unless Otherwise Specified Symbol Rating Rating Unit VCEO Collector-Emitter Voltage 60 V VCBO Colector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V ICP Peak Collector Current 8.0 A IC PC.

TIP120 : TIP120/125 Collector Emitter Voltage VCEO 60 Collector Base Voltage VCBO 60 Emitter Base Voltage VEBO Collector Current Continuous IC Collector Current Peak ICM Base Current Power Dissipation upto Tc=25ºC Derate above 25ºC IB PD Power Dissipation upto Ta=25ºC Derate above 25ºC PD Unclamped Inductive Load Energy Operating And Storage Junction Temperature *E Tj, Tstg * IC=1A, L=100mH, P.R.F.=10Hz, Vcc=20V, RBE=100Ω TIP121/126 80 80 5 5 8 120 65 0.52 2 16 50 - 65 to +150 TIP122/127 100 100 UNIT V V V A A mA W W/ºC W mW/ºC mJ ºC THERMAL RESISTANCE Junction to Case Junction to Ambient in free air Rth (j-c) Rth (j-a) 1.92 62.5 ºC/W ºC/.

TIP120 : ·With TO-220C package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage ·Complement to type TIP125/126/127 APPLICATIONS ·Designed for general–purpose amplifier and low–speed switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS (Tc=25 ) SYMBOL PARAMETER CONDITIONS TIP120 VCBO Collector-base voltage TIP121 TIP122 Open emitter TIP120 VCEO Collector-emitter voltage TIP121 TIP122 Open base VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC Collector power dissipation Junction temperature Storage temperature Open collector TC=.

TIP120 : TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with TIP125, TIP126 and TIP127 ● 65 W at 25°C Case Temperature ● 5 A Continuous Collector Current ● Minimum hFE of 1000 at 3 V, 3 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B1 C2 E3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT TIP120 60 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) TEEmitter-base voltage Continuous collector current EPeak collector current (see Note 1) Continuous base current LContinuous device diss.

TIP120 : ·High DC Current Gain- : hFE = 1000(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.0V(Max)@ IC= 3A = 4.0V(Max)@ IC= 5A ·Complement to Type TIP125 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current Collector Power Diss.

TIP120 : TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor November 2014 TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP125 / TIP126 / TIP127 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 ≅Ω ≅Ω R2 E Ordering Information Part Number TIP120 TIP120TU TIP121 TIP121TU TIP122 TIP122TU Top Mark TIP120 TIP120 TIP121 TIP121 TIP122 TIP122 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Bulk Rail Bulk Rail Absolute Maximum Ratings Stresses exceedi.

TIP120 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D Plastic Medium-Power Complementary Silicon Transistors designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP120, TIP125 VCEO(sus) = 80 Vdc (Min) — TIP121, TIP126 VCEO(sus) = 100 Vdc (Min) — TIP122, TIP127 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built–In Base–Emitter Shunt Resistors • TO–220AB Compact Package *MAXIMUM RATINGS Rating TIP120, .

TIP120 : The TIP120 is a silicon NPN Darlington transistor in a TO−220 type package designed for general purpose amplifier and low−speed switching applications. Features: D High DC Current Gain: hFE = 2500 (Typ) at IC = 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 60V (Min) at IC = 100mA D Low Collector−Emitter Saturation Voltage: Low Collector−Emitter Saturation Voltage: VVCCEE((ssaatt)) = = 2.0V 4.0V (Max) (Max) at at IICC = = 3A 5A Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO 60V Collector−Base Voltage, VCB .

TIP120 : The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Product status links TIP120 TIP121 TIP122 TIP125 TIP127 DS0854 - Rev 5 - May 2021 For further information contact your local STMicroelectronics sales office. www.st.com 1 Note: TIP120, TIP121, TIP122, TIP125, TIP127 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-base voltage (IE = 0 A) Collector-emitter voltage (IB = 0 A) Collector-base voltage (IC = 0 A) Collector current.

TIP120 : TIP120 ... TIP122 TIP120 ... TIP122 NPN Version 2006-10-17 10±0.2 3 4 3.8 Type Typ Si-Epitaxial Planar Darlington Power Transistors Si-Epitaxial Planar Darlington-Leistungs-Transistoren Max. power dissipation with cooling Max. Verlustleistung mit Kühlung Collector current Kollektorstrom Plastic case Kunststoffgehäuse Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen NPN 65 W 5A TO-220AB 2.2 g 15.7 1 2 3 www.DataSheet4U.com 13.2 1.5 0.9 2.54 Dimensions - Maße [mm] 1=B 2/4 = C 3=E Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spg. Collector-Ba.

TIP120 : TIP120 / TIP121 / TIP122 — NPN Epitaxial Darlington Transistor TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features • Medium Power Linear Switching Applications • Complementary to TIP125 / TIP126 / TIP127 Equivalent Circuit C B 1 TO-220 1.Base 2.Collector 3.Emitter R1 3 ≅ LΩ 3 ≅ LΩ R2 E Ordering Information Part Number TIP120 TIP120TU TIP121 TIP121TU TIP122 TIP122TU Top Mark TIP120 TIP120 TIP121 TIP121 TIP122 TIP122 Package TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) TO-220 3L (Single Gauge) Packing Method Bulk Rail Bulk Rail Bulk Rail Absolute Maximum Ratings Stresses excee.

TIP120 : TIP120/121/122 TIP120/121/122 ◎ SEMIHOW REV.A0,Oct 2007 TIP120/121/122 TIP120/121/122 Monolithic Construction With Built In Base-Emitter Shunt Resistors - High DC Current Gain : hFE=1000 @ VCE= 4V, IC= 3A (Min.) - Collector-Emitter Sustaining Voltage - Low Collector-Emitter Saturation Voltage - Industrial Use - Complementary to TIP125/126/127 Absolute Maximum Ratings Ta=25℃ unless otherwise noted CHARACTERISTICS SYMBOL RATING UNIT Collector-Base Voltage : TIP120 : TIP121 : TIP122 VCBO 60 V 80 V 100 V Collector-Emitter Voltage : TIP120 : TIP121 : TIP122 VCEO 60 V 80 V 100 V Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current Collector Dissipation(Ta=.

TIP120F : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TIP120F,121F,122F DARLINGTON TRANSISTOR (NPN) TO-220F TIP125F,126F,127F DARLINGTON TRANSISTOR (PNP) FEATURES Medium Power Complementary Silicon Transistors 1.BASE 2.COLLECTOR 3.EMITTER 123 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO VCEO VEBO IC PC RθJA RθJC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature TIP120F TIP125F 60 60 TIP121F TIP126F 80 80 5 5 2 62.5 1.

TIP120G : TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 60 Vdc (Min) − TIP120, TIP125 = 80 Vdc (Min) − TIP121, TIP126 = 100 Vdc (Min) − TIP122, TIP127 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • Pb−Free Packages are Available* www.onsemi.com DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER.

TIP121 : TIP120 VCBO VCEO VEBO IC ICM IB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Base Current 60 60 Power Dissipation upto TC=25°C Power Dissipation Derate above TC=25°C PD Power Dissipation upto TA=25°C Power Dissipation Derate above TA=25°C RθJA RθJC TJ, TSTG Thermal Resistance from Junction to Ambient in Free Air Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range TIP121 80 80 5.0 5.0 8.0 120 65 0.52 2.0 16 62.5 1.92 -65 to +150 TIP122 100 100 Unit V V.




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