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KTC4374


Part Number KTC4374
Manufacturer WEJ
Title NPN Transistor
Description RoHS KTC4374 KTC4374 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: 400 Collector-base voltag...
Features Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: 400 Collector-base voltage mA OV(BR)CBO: 80 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwis...

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KTC4370 : ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type KTA1659 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature 0.15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTC4370 isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transis.

KTC4370 : SEMICONDUCTOR TECHNICAL DATA KTC4370/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTA1659/A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage KTC4370 KTC4370A Collector-Emitter Voltage KTC4370 KTC4370A Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 160 180 160 180 5 1.5 0.15 20 150 -55 150 UNIT V V V A A W O Q A U E K LL M DD NN T T 123 G B J F P C DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.70Ź0.30 S D 0.85 MAX E Ѹ3.20Ź0.20 F 3..

KTC4370A : ·High Collector-Emitter Breakdown Voltage VCEO= 180V(Min) ·Complement to Type KTA1659A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature 0.15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELE.

KTC4370A : DIP Type Transistors ■ Features ● High Transition Frequency ● Complementary to KTA1659A 15.87 ±0.20 3.30 ±0.20 NPN Transistors KTC4370A TO-220F ±0.20 φ3.18±0.20 ±0.20 2.54 ±0.20 Unit: mm 0.70 ±0.20 6.68 ±0.20 12.42 ±0.20 1.47max ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Tc = 25℃ Symbol VCBO VCEO VEBO IC IB PC TJ Tstg 2.54typ 2.54typ Rating 180 180 5 1.5 0.15 20 150 -55 to 150 ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter bre.

KTC4370A : SEMICONDUCTOR TECHNICAL DATA KTC4370/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTA1659/A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage KTC4370 KTC4370A Collector-Emitter Voltage KTC4370 KTC4370A Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 160 180 160 180 5 1.5 0.15 20 150 -55 150 UNIT V V V A A W O Q A U E K LL M DD NN T T 123 G B J F P C DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.70Ź0.30 S D 0.85 MAX E Ѹ3.20Ź0.20 F 3..

KTC4372 : SMD Type Triple Diffused NPN Transistor KTC4372 Transistors Features High Voltage: VCEO=150V High Transition Frequency:fT=120MHz Small Flat Package Absolute Maximum Ratings Ta = 25 Parameter Colletor-Base Voltage Colletor-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Colletor Power Dissipation Junction Temperature Storage Temperature Range * mounted on ceramic substrate (250mm X0.8t) 2 Symbol VCBO VCEO VEBO IC IB PC PC* Tj Tstg Rating 200 150 5 50 10 500 1 150 -55 to 150 Unit V V V mA mA mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter-Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Tran.

KTC4372 : KTC4372 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Voltage Switching Application z High Voltage z High Transition Frequency SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 200 150 5 50 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base.

KTC4372 : Production specification Triple Diffused NPN Transistor FEATURES  High transition frequency: fT=120MHz(Typ.).  High voltage: VCEO=150V.  PC=1W(Mounted on ceramic substrate).  Small flat package.  Complementary: KTA1660. Pb Lead-free KTC4372 APPLICATIONS  High voltage switching application. ORDERING INFORMATION Type No. Marking KTC4372 AO/AY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base current 200 150 5 50 10 PC Collector Dissipation 500 1* Tj,Tstg Junction and Storage Temperature *: KTC4372 mounte.

KTC4372 : REPLACEMENT TYPE : KTC4372 FEATURES  Small Flat Package  High Voltage Switching Application  High Voltage  High Transition Frequency MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 200 Collector-Emitter Voltage VCEO 150 Emitter-Base Voltage VEBO 5 Collector Current-Continuous IC 50 Collector Power Dissipation PC 500 Thermal Resistance From Junction to Ambient RθJA 250 Junction Temperature TJ 150 Storage Temperature Tstg -55~+150 Unit V V V mA mW °C/W °C °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown.

KTC4372 : J B EA SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING APPLICATION. FEATURES ᴌHigh Voltage : VCEO=150V. ᴌHigh Transition Frequency : fT=120MHz(Typ.). ᴌ1W (Monunted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTA1660. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC PC* Tj 200 150 5 50 10 500 1 150 Storage Temperature Range Tstg -55ᴕ150 PC* : KTC4372 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V mA mA mW W ᴱ ᴱ KTC4372 TRIPLE DIFFUSED NPN TRANSISTOR AC H G DD K FF 1 23 DIM A.

KTC4373 : J B EC SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES High Voltage : VCEO=120V. High Transition Frequency : fT=120MHz(Typ.). 1W(Monunted on Ceramic Substrate). Small Flat Package. Complementary to KTA1661. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 120 Collector-Emitter Voltage VCEO 120 Emitter-Base Voltage VEBO 5 Collector Current IC 800 Base Current IB 160 Collector Power Dissipation PC 500 PC* 1 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 PC* : KTC4373 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V mA mA mW W KTC4373 EPITAXIAL PLANAR NPN TRANSISTOR AC H G DD K FF 1 23 DIM A B .

KTC4373 : SMD Type Epitaxial Planar NPN Transistor KTC4373 Transistors Features High Voltage: VCEO=120V High Transition Frequency:fT=120MHz Small Flat Package Absolute Maximum Ratings Ta = 25 Parameter Colletor-Base Voltage Colletor-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Colletor Power Dissipation Junction Temperature Storage Temperature Range * mounted on ceramic substrate (250mm X0.8t) 2 Symbol VCBO VCEO VEBO IC IB PC PC* Tj Tstg Rating 120 120 5 800 160 500 1 150 -55 to 150 Unit V V V mA mA mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter-Cut-off Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage DC Cur.

KTC4373 : MCC Micro Commercial Components TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTC4373 Features • • • • • Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low noise Excellent hFE linearity Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 120 120 5 0.8 0.5 150 -55 to +150 Unit V V V A W к к NPN Plastic-Encapsulate Transistors  .

KTC4373 : KTC4373 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Voltage Application z High Voltage z High Transition Frequency SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 120 120 5 800 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdo.

KTC4374 : KTC4374 TRANSISTOR (NPN) FEATURES z Small Flat Package z General Purpose Application SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 80 80 5 400 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitte.

KTC4374 : J BE E SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌ1W (Mounted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTA1662. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC PC* Tj 80 80 5 400 80 500 1 150 Storage Temperature Range Tstg -55ᴕ150 PC* : KTA1662 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V mA mA mW W ᴱ ᴱ KTC4374 EPITAXIAL PLANAR NPN TRANSISTOR AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.2.




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