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KTC4376


Part Number KTC4376
Manufacturer KEC
Title EPITAXIAL PLANAR NPN TRANSISTOR
Description J BP E SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES ᴌ1W (Mounted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to...
Features ᴌ1W (Mounted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTA1664. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCE...

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KTC4370 : ·High Collector-Emitter Breakdown Voltage VCEO= 160V(Min) ·Complement to Type KTA1659 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature 0.15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTC4370 isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transis.

KTC4370 : SEMICONDUCTOR TECHNICAL DATA KTC4370/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTA1659/A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage KTC4370 KTC4370A Collector-Emitter Voltage KTC4370 KTC4370A Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 160 180 160 180 5 1.5 0.15 20 150 -55 150 UNIT V V V A A W O Q A U E K LL M DD NN T T 123 G B J F P C DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.70Ź0.30 S D 0.85 MAX E Ѹ3.20Ź0.20 F 3..

KTC4370A : ·High Collector-Emitter Breakdown Voltage VCEO= 180V(Min) ·Complement to Type KTA1659A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5.0 V IC(DC) Collector Current(DC) 1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature 0.15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELE.

KTC4370A : DIP Type Transistors ■ Features ● High Transition Frequency ● Complementary to KTA1659A 15.87 ±0.20 3.30 ±0.20 NPN Transistors KTC4370A TO-220F ±0.20 φ3.18±0.20 ±0.20 2.54 ±0.20 Unit: mm 0.70 ±0.20 6.68 ±0.20 12.42 ±0.20 1.47max ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Tc = 25℃ Symbol VCBO VCEO VEBO IC IB PC TJ Tstg 2.54typ 2.54typ Rating 180 180 5 1.5 0.15 20 150 -55 to 150 ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter bre.

KTC4370A : SEMICONDUCTOR TECHNICAL DATA KTC4370/A EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Transition Frequency : fT=100MHz(Typ.). Complementary to KTA1659/A. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage KTC4370 KTC4370A Collector-Emitter Voltage KTC4370 KTC4370A Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 160 180 160 180 5 1.5 0.15 20 150 -55 150 UNIT V V V A A W O Q A U E K LL M DD NN T T 123 G B J F P C DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 2.70Ź0.30 S D 0.85 MAX E Ѹ3.20Ź0.20 F 3..

KTC4372 : SMD Type Triple Diffused NPN Transistor KTC4372 Transistors Features High Voltage: VCEO=150V High Transition Frequency:fT=120MHz Small Flat Package Absolute Maximum Ratings Ta = 25 Parameter Colletor-Base Voltage Colletor-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Colletor Power Dissipation Junction Temperature Storage Temperature Range * mounted on ceramic substrate (250mm X0.8t) 2 Symbol VCBO VCEO VEBO IC IB PC PC* Tj Tstg Rating 200 150 5 50 10 500 1 150 -55 to 150 Unit V V V mA mA mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter-Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Tran.

KTC4372 : KTC4372 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Voltage Switching Application z High Voltage z High Transition Frequency SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 200 150 5 50 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base.

KTC4372 : Production specification Triple Diffused NPN Transistor FEATURES  High transition frequency: fT=120MHz(Typ.).  High voltage: VCEO=150V.  PC=1W(Mounted on ceramic substrate).  Small flat package.  Complementary: KTA1660. Pb Lead-free KTC4372 APPLICATIONS  High voltage switching application. ORDERING INFORMATION Type No. Marking KTC4372 AO/AY SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC IB Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base current 200 150 5 50 10 PC Collector Dissipation 500 1* Tj,Tstg Junction and Storage Temperature *: KTC4372 mounte.

KTC4372 : REPLACEMENT TYPE : KTC4372 FEATURES  Small Flat Package  High Voltage Switching Application  High Voltage  High Transition Frequency MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage VCBO 200 Collector-Emitter Voltage VCEO 150 Emitter-Base Voltage VEBO 5 Collector Current-Continuous IC 50 Collector Power Dissipation PC 500 Thermal Resistance From Junction to Ambient RθJA 250 Junction Temperature TJ 150 Storage Temperature Tstg -55~+150 Unit V V V mA mW °C/W °C °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Collector-Base Breakdown Voltage Collector-Emitter Breakdown.

KTC4372 : J B EA SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE SWITCHING APPLICATION. FEATURES ᴌHigh Voltage : VCEO=150V. ᴌHigh Transition Frequency : fT=120MHz(Typ.). ᴌ1W (Monunted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTA1660. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC PC* Tj 200 150 5 50 10 500 1 150 Storage Temperature Range Tstg -55ᴕ150 PC* : KTC4372 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V mA mA mW W ᴱ ᴱ KTC4372 TRIPLE DIFFUSED NPN TRANSISTOR AC H G DD K FF 1 23 DIM A.

KTC4373 : J B EC SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION. FEATURES High Voltage : VCEO=120V. High Transition Frequency : fT=120MHz(Typ.). 1W(Monunted on Ceramic Substrate). Small Flat Package. Complementary to KTA1661. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO 120 Collector-Emitter Voltage VCEO 120 Emitter-Base Voltage VEBO 5 Collector Current IC 800 Base Current IB 160 Collector Power Dissipation PC 500 PC* 1 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 PC* : KTC4373 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V mA mA mW W KTC4373 EPITAXIAL PLANAR NPN TRANSISTOR AC H G DD K FF 1 23 DIM A B .

KTC4373 : SMD Type Epitaxial Planar NPN Transistor KTC4373 Transistors Features High Voltage: VCEO=120V High Transition Frequency:fT=120MHz Small Flat Package Absolute Maximum Ratings Ta = 25 Parameter Colletor-Base Voltage Colletor-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Colletor Power Dissipation Junction Temperature Storage Temperature Range * mounted on ceramic substrate (250mm X0.8t) 2 Symbol VCBO VCEO VEBO IC IB PC PC* Tj Tstg Rating 120 120 5 800 160 500 1 150 -55 to 150 Unit V V V mA mA mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter-Cut-off Current Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage DC Cur.

KTC4373 : MCC Micro Commercial Components TM   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# KTC4373 Features • • • • • Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Low noise Excellent hFE linearity Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Collector power dissipation Junction Temperature Storage Temperature Rating 120 120 5 0.8 0.5 150 -55 to +150 Unit V V V A W к к NPN Plastic-Encapsulate Transistors  .

KTC4373 : KTC4373 TRANSISTOR (NPN) FEATURES z Small Flat Package z High Voltage Application z High Voltage z High Transition Frequency SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 120 120 5 800 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdo.

KTC4374 : KTC4374 TRANSISTOR (NPN) FEATURES z Small Flat Package z General Purpose Application SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 80 80 5 400 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitte.

KTC4374 : RoHS KTC4374 KTC4374 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: 400 Collector-base voltage mA OV(BR)CBO: 80 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain ECollector-emitter saturation voltage LBase-emitter voltage ETransition frequency JCollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEB.

KTC4374 : J BE E SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. FEATURES ᴌ1W (Mounted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTA1662. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC PC* Tj 80 80 5 400 80 500 1 150 Storage Temperature Range Tstg -55ᴕ150 PC* : KTA1662 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V mA mA mW W ᴱ ᴱ KTC4374 EPITAXIAL PLANAR NPN TRANSISTOR AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.2.




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