012N08N5

IPT012N08N5 MOSFET OptiMOSTM5Power-Transistor,80V Features Idealforhighfrequencyswitchingandsync.rec. ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) N-channel,normallevel 100%avalanchetested Pb-freeplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplications Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 1.2 mΩ ID 400 A Qoss 208 nC QG(0V..10V) 178 nC HSOF Tab 12345 678 Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT012N08N5 Package PG-HSOF-8 Marking 012N08N5 RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.3,2020-10-23 OptiMOSTM5Power-Transistor,80V IPT012N08N5 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams ...