02DZ12 Datasheet
TOSHIBA Diode Silicon Epitaxial Planar Type
02DZ2.0~02DZ24
02DZ2.0~02DZ24
Constant Voltage Regulation Applications Reference Voltage Applications
Unit: mm
z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced.
z Nominal voltage tolerance about ±2.5% (2.0V~24V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P*
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
JEDEC JEITA TOSHIBA
− − 1-1E1A
reliability significantly even if the operating conditions (i.e.
Weight: 4.5mg (typ.)
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semi.
TOSHIBA Diode Silicon Epitaxial Planar Type
02DZ2.0~02DZ24
02DZ2.0~02DZ24
Constant Voltage Regulation Applications Reference Voltage Applications
Unit: mm
z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced.
z Nominal voltage tolerance about ±2.5% (2.0V~24V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P*
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to .
TOSHIBA Diode Silicon Epitaxial Planar Type
02DZ2.0~02DZ24
02DZ2.0~02DZ24
Constant Voltage Regulation Applications Reference Voltage Applications
Unit: mm
z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced.
z Nominal voltage tolerance about ±2.5% (2.0V~24V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P*
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to .
TOSHIBA Diode Silicon Epitaxial Planar Type
02DZ2.0~02DZ24
02DZ2.0~02DZ24
Constant Voltage Regulation Applications Reference Voltage Applications
Unit: mm
z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced.
z Nominal voltage tolerance about ±2.5% (2.0V~24V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P*
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to .
TOSHIBA Diode Silicon Epitaxial Planar Type
02DZ2.0~02DZ24
02DZ2.0~02DZ24
Constant Voltage Regulation Applications Reference Voltage Applications
Unit: mm
z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced.
z Nominal voltage tolerance about ±2.5% (2.0V~24V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P*
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to .
Diode
TOSHIBA Diode Silicon Epitaxial Planar Type
02DZ2.0~02DZ24
02DZ2.0~02DZ24
Constant Voltage Regulation Applications Reference Voltage Applications
Unit: mm
z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced.
z Nominal voltage tolerance about ±2.5% (2.0V~24V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
P*
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
JEDEC JEITA TOSHIBA
− − 1-1E1A
reliability significantly even if the operating conditions (i.e.
Weight: 4.5mg (typ.)
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
*: Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimensions of 4 × 4mm.
Electrical Characteristics
(See Pages 3~5.)
1
2007-11-01
Marking
VZ additional ranking upper … X rank , middle … Y rank , lower … Z rank
Voltage rank
02DZ2.0~02DZ24
24
Decimal point ●: VZ=(VZ ranking voltage)×0.1, nil : VZ=V.
2023-09-22 : VS-12CTQ045-M3 VS-12CTQ040-M3 VS-12CTQ035-M3 12CTQ030 02DZ22 02DZ24 02DZ20 02DZ18 02DZ15 02DZ16