02DZ6.8

TOSHIBA Diode Silicon Epitaxial Planar Type 02DZ2.0~02DZ24 02DZ2.0~02DZ24 Constant Voltage Regulation Applications Reference Voltage Applications Unit: mm z The mounting of four devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. z Nominal voltage tolerance about ±2.5% (2.0V~24V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Power dissipation P* 200 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC JEITA TOSHIBA − − 1-1E1A reliability significantly even if the operating conditions (i.e. Weight: 4.5mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimensions of 4 × 4mm. Electrical Characteristics (See Pages 3~5.) 1 2007-11-01 Marking VZ additional ranking upper … X rank , middle … Y rank , lower … Z rank Voltage rank 02DZ2.0~02DZ24 24 Decimal point ●: VZ=(VZ ranking voltage)×0.1, nil : VZ=V...