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SSM02N60P
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Repetitive-avalanche rated Fast-switching Simple ...
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SSM02N60P
N-CHANNEL ENHANCEMENT-MODE POWER
MOSFET
Repetitive-avalanche rated Fast-switching Simple drive requirement
G D
BV DSS RDS(ON) ID TO-220
600V 8Ω 2A
Description
S
The TO-220 package is widely preferred for commercial and industrial applications. The SSM02N60P is well suited for DC/DC and AC/DC converters in telecom, industrial and consumer applications. G
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S
Absolute Maximum Ratings
Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS IAR EAR TSTG TJ Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
1
Rating 600 ± 20 2 1.26 6 39 0.31
2
Units V V A A A W W/ ℃ mJ A mJ ℃ ℃
Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Storage Temperature Range Operating Junction Temperature Range
130 2 2 -55 to 150 -55 to 150
Thermal Data
Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.2 62 Unit ℃/W ℃/W
Rev.2.01 6/06/2003
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SSM02N60P
Electrical Characteristics @ T j=25oC (unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown
Voltage
Test Conditions VGS=0V, ID=250uA
Min. 600 2 -
Typ. 0.6 0.2 14 2 8.5 9.5 12 21 9 155 27 14
Max. Units 8 4 10 100 ±100 V V/℃ Ω V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown
Voltage Temperature...