03N60S5

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance SPP03N60S5 VDS RDS(on) ID 600 V 1.4 Ω 3.2 A PG-TO220 2 P-TO220-3-1 123 Type SPP03N60S5 Package PG-TO220 Ordering Code Q67040-S4184 Marking 03N60S5 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C ID Pulsed drain current, tp limited by Tjmax ID puls Avalanche energy, single pulse EAS ID = 2.4 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR ID = 3.2 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax IAR Gate source voltage VGS Gate source voltage AC (f >1Hz) VGS Power dissipation, TC = 25°C Operating and storage temperature Ptot Tj , Tstg Value 3.2 2 5.7 100 0.2 3.2 ±20 ±30 38 -55... +150 Unit A mJ A V W °C Rev. 2.7 Page 1 2009-11-26 SPP03N60S5 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 3.2 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 2) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s3) Symbol dv/dt Value 20 Unit V/ns Symbol RthJC RthJA RthJA Tsold min. - Values typ. max. - 3.3 - 62 Unit K/W - - 62 - 35 - - 260 °C Electrical Characteristics, at Tj=25°C u...