For BSZ065N03LS
OptiMOSTM Power-MOSFET
Features
Product Summary
• Optimized for high performance Buck converter (Server,VGA) VDS
30 V
• Very low FOMQOSS for High Frequency SMPS • Low FOMSW for High Frequency SMPS • Excellent gate charge x R DS(on) product (FOM)
RDS(on),max ID
VGS=10 V VGS=4.5 V
6.5 mW 8.6 40 A
• Very low on-resistance R DS(on) @ V GS=4.5 V
PG-TSDSON-8 (fused leads)
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) fo.
Power MOSFET
For BSZ065N03LS
OptiMOSTM Power-MOSFET
Features
Product Summary
• Optimized for high performance Buck converter (Server,VGA) VDS
30 V
• Very low FOMQOSS for High Frequency SMPS • Low FOMSW for High Frequency SMPS • Excellent gate charge x R DS(on) product (FOM)
RDS(on),max ID
VGS=10 V VGS=4.5 V
6.5 mW 8.6 40 A
• Very low on-resistance R DS(on) @ V GS=4.5 V
PG-TSDSON-8 (fused leads)
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type BSZ065N03LS
Package PG-TSDSON-8 (fused leads)
Marking 065N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C
V GS=4.5 V, T C=100 °C
Pulsed drain current2)
I D,pulse
Avalanche current, single pulse3)
I AS
Avalanche energy, single pulse
E AS
Gate source voltage
V GS
1) J-STD20 and JESD22 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information
V GS=4.5 V, T A=25 °C, R thJA=60 K/W
T C=25 °C T C=25 °C I D=20 A, R GS=25 W
Value 40 31 40
27
12
160 20 16 ±20
Unit A
mJ V
Rev. 2.2
page 1
2013-05-10
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
P tot T C=25 °C
T A=25 °C, R thJA=60 K/W
Operating and storage temperature T j, T stg IEC climatic category; DI.