090N03L

Type OptiMOS™3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated Pb-free plating Type IPD090N03L G E8177 IPD090N03L G E8177 Product Summary VDS RDS(on),max ID 30 V 9 mW 40 A Package Marking PG-TO252-3-11 090N03L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 1) J-STD20 and JESD22 V GS=4.5 V, T C=100 °C I D,pulse I AS E AS dv /dt V GS T C=25 °C T C=25 °C I D=12 A, R GS=25 W I D=40 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C Rev. 2.0 page 1 Value 40 37 40 30 280 40 40 6 ±20 Unit A mJ kV/µs V 2014-01-14 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 IPD090N03L G E8177 Value 42 -55 ... 175 55/175/56 Unit W °C Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm² cooling ...