SEMICONDUCTOR
10N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (10A, 600Volts)
DESCRIPTION
The Ne...
SEMICONDUCTOR
10N60 Series RRooHHSS
Nell High Power Products
N-Channel Power
MOSFET (10A, 600Volts)
DESCRIPTION
The Nell 10N60 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown
voltage rating of 600V, and max. threshold
voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
FEATURES
RDS(ON) = 0.8Ω@VGS = 10V Ultra low gate charge(57nC max.) Low reverse transfer capacitance (CRSS = 18pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature
D
GDS
TO-220AB (10N60A)
GDS TO-220F (10N60AF)
D
G S
TO-263(D2PAK) (10N60H)
PRODUCT SUMMARY
ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.
10 600 0.8 @ VGS = 10V 57
D (Drain)
G (Gate)
S (Source)
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SEMICONDUCTOR
10N60 Series RRooHHSS
Nell High Power Products
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source
voltage
TJ=25°C to 150°C
VDGR
Drain to Gate
voltage
RGS=20KΩ
VGS
ID
IDM IAR EAR EAS dv/dt
Gate to Source
voltage
Continuous Drain Current
Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy (Note 2) Peak diode recovery dv/dt(Note 3)
TC=25°C TC=100°C
IAR=10A, RGS=50Ω, VG...