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10N60B MOSFET Datasheet PDF

N-CHANNEL MOSFET

N-CHANNEL MOSFET

 

 

Part Number 10N60B
Description N-CHANNEL MOSFET
Feature 10N60(F,B,H) 10A mps,600 Volts N-CHANNE L MOSFET FEATURE  10A,600V,RDS(ON) =0.85Ω@VGS=10V/5A  Low gate charge  Low Ciss  Fast switching  100 % avalanche tested  Improved dv/dt c apability TO-220AB 10N60 ITO-220AB 10 N60F TO-263 10N60B TO-262 10N60H Abs olute Maximum Ratings(TC=25℃,unless o therwise noted) Parameter Symbol Dra in-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature .
Manufacture CHONGQING PINGYANG
Datasheet
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Part Number 10N60B
Description 600V N-Channel MOSFET
Feature SSH10N60B November 2001 SSH10N60B 600V N-Channel MOSFET General Description T hese N-Channel enhancement mode power f ield effect transistors are produced us ing Fairchild’s proprietary, www.Data Sheet4U.com planar, DMOS technology. Th is advanced technology has been especia lly tailored to minimize on-state resis tance, provide superior switching perfo rmance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. Features • • • • • • 10A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) .
Manufacture Fairchild Semiconductor
Datasheet
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