11N65FS

11N65(F,B,H)S 11 Amps,650 Volts N-Channel Super Junction Power MOSFET FEATURE  11A,650V,RDS(ON)MAX=0.36Ω@VGS=10V/5.5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 11N65S ITO-220AB 11N65FS TO-263 11N65BS TO-262 \ 11N65HS Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds VDSS VGSS ID IDM EAS IAR EAR dv/dt TJ,TSTG TL Mounting Torque 6-32 or M3 screw 11N65(F,B,H)S 650 ±30 11 33 280 5.5 0.5 15 -55 to +150 260 10 1.1 UNIT V A mJ A mJ V/ns ℃ ℃ lbf·in N·m Thermal Characteristics Parameter Thermal resistance , Junction to Case Thermal resistance , Channel to Case Thermal resistance , Channel to Ambient Maximum Power Dissipation TC=25℃ Symbol Rth(J-c) Rth(ch-c) Rth(ch-a) PD ITO-220 3.82 3.82 80 32.7 TO-220 1.03 1.03 62 121 TO-262/263 1.03 1.03 62 121 Units ℃/W ℃/W ℃/W W Version1.0-2015.2 www.perfectway.cn Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Symbol Off Characteristics Drain-Source Breakdown Voltage BVDSS Breakdown Temperature Coefficient ΔBVDSS /ΔTJ Zero Gate Voltage Drain Current IDSS...