STD11N65M2, STP11N65M2, STU11N65M2
Datasheet
N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power MOSFET in DPAK, TO-220 a...
STD11N65M2, STP11N65M2, STU11N65M2
Datasheet
N-channel 650 V, 0.60 Ω typ., 7 A MDmesh™ M2 Power
MOSFET in DPAK, TO-220 and IPAK packages
TAB 3
DPAK 1
TAB
TAB
TO-220
1 23
IPAK
123
D(2, TAB)
G(1)
S(3)
NG1D2TS3Z
Features
Order code
VDS
RDS(on) max.
ID
STD11N65M2
STP11N65M2
650 V
0.68 Ω
7A
STU11N65M2
Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected
PTOT 85 W
Package DPAK TO-220 IPAK
Applications
Switching applications
Description
These devices are N-channel Power
MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converters.
Product status link STD11N65M2 STP11N65M2 STU11N65M2
DS10348 - Rev 6 - June 2019 For further information contact your local STMicroelectronics sales office.
www.st.com
STD11N65M2, STP11N65M2, STU11N65M2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source
voltage
Drain current (continuous) at Tcase = 25 °C ID
Drain current (continuous) at Tcase = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at Tcase = 25 °C
dv/dt (2)
Peak diode recovery
voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Pulse width...
