12N30

UNISONIC TECHNOLOGIES CO., LTD 12N30 Preliminary Power MOSFET 12A, 300V N-CHANNEL POWER MOSFET „ DESCRIPTION The U TC 12N30 is an N-ch annel mod e p ower MOSF ET using UTC’ s advanced technology to provide customers with planar stripe and DMOS te chnology. T his techno logy s pecializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand hig h e nergy pu lse i n the avala nche and commutation mode. The UT C 12N30 is univers ally ap plied in el ectronic lam p ball ast based o n ha lf brid ge to pology an d h igh efficient s witched mo de power supply. „ FEATURES * RDS(ON)=0.34Ω @ VGS=10V * High switching speed „ SYMBOL 2.Drain 1.Gate 3.Source „ ORDERING INFORMATION Package TO-252 1 G Pin Assignment 2 3 D S Packing Tape Reel Ordering Number Lead Free Halogen Free 12N30L-TN3-R 12N30G-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-787.a http://www.Datasheet4U.com 12N30 „ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 300 V Gate-Source Voltage VGSS ±20 V ID 12 A Continuous (TC=25°C) Drain Current Pulsed (Note 2) IDM 48 A Single Pulsed Avalanche Energy EAS 474 mJ Power Dissipation PD 83 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1. Absolute maximum ratings are those values beyond which the device c...