SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Ma...
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power
MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
560 V VGS = 10 V
48 12 15 Single
TO-220AB
TO-220 FULLPAK
0.555 D
FEATURES Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested Gate Charge Improved Trr/Qrr Improved Compliant to RoHS Directive 2002/95/EC
S D G D2PAK (TO-263)
GDS
G
GD S
S N-Channel
MOSFET
ORDERING INFORMATION
Package
TO-220AB
Lead (Pb)-free
SiHP12N50C-E3
D2PAK (TO-263) SiHB12N50C-E3
TO-220 FULLPAK SiHF12N50C-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
LIMIT
PARAMETER
TO220-AB SYMBOL D2PAK (TO-263)
TO-220 FULLPAK
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentc
VGS at 10 V
TC = 25 °C TC = 100 °C
Linear Derating Factor
Single Pulse Avalanche Energyb
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Re...
