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12N50T Datasheet

Part Number 12N50T
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description N-Channel MOSFET
Datasheet 12N50T Datasheet12N50T Datasheet (PDF)

FDP12N50 / FDPF12N50T — N-Channel UniFETTM MOSFET FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 mΩ Features • RDS(on) = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 22 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFE.

  12N50T   12N50T






Part Number 12N50K-MT
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description N-CHANNEL POWER MOSFET
Datasheet 12N50T Datasheet12N50K-MT Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 12N50K-MT 12A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N50K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 12N50K-MT is generally applied in high efficiency switch mode power supplies, active power .

  12N50T   12N50T







Part Number 12N50FT
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description FDPF12N50FT
Datasheet 12N50T Datasheet12N50FT Datasheet (PDF)

FDP12N50F / FDPF12N50FT N-Channel MOSFET December 2007 UniFETTM FDP12N50F / FDPF12N50FT N-Channel MOSFET 500V, 11.5A, 0.7Ω Features • RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A • Low gate charge ( Typ. 21nC) • Low Crss ( Typ. 11pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability • RoHS compliant tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology .

  12N50T   12N50T







Part Number 12N50C
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet 12N50T Datasheet12N50C Datasheet (PDF)

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 560 V VGS = 10 V 48 12 15 Single TO-220AB TO-220 FULLPAK 0.555 D FEATURES • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved • Compliant to RoHS Directive 2002/95/EC S D G D2PAK (TO-263) GDS G GD S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB Lead (Pb)-free SiHP12N.

  12N50T   12N50T







Part Number 12N50-CB
Manufacturers UTC
Logo UTC
Description N-CHANNEL MOSFET
Datasheet 12N50T Datasheet12N50-CB Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 12N50-CB Preliminary 12A, 500V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 12N50-CB is a N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 12N50-CB is generally applied in high efficiency switch mode pow.

  12N50T   12N50T







N-Channel MOSFET

FDP12N50 / FDPF12N50T — N-Channel UniFETTM MOSFET FDP12N50 / FDPF12N50T N-Channel UniFETTM MOSFET 500 V, 11.5 A, 650 mΩ Features • RDS(on) = 550 mΩ (Typ.) @ VGS = 10 V, ID = 6 A • Low Gate Charge (Typ. 22 nC) • Low Crss (Typ. 11 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D GDS TO-220 G GDS TO-220F MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS VGSS ID IDM EAS IAR EAR dv/dt PD Drain to Source Voltag.


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