DatasheetsPDF.com
12N60C
IGBT
Description
HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60C VCES = 600 V IC25 = 24 A VCE(sat) = 2.7 V tfi(typ) = 55 ns Symbol Test Conditions VCES VCGR V GES VGEM I C25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 300 µ...
IXYS
Download 12N60C Datasheet
Similar Datasheet
12N60M2
N-channel Power MOSFET
- STMicroelectronics
12N60K-MT
N-CHANNEL POWER MOSFET
- Unisonic Technologies
12N60H
N-CHANNEL MOSFET
- CHONGQING PINGYANG
12N60F
600V N-Channel MOSFET
- GFD
12N60F
N-CHANNEL MOSFET
- CHONGQING PINGYANG
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
