12N60CD1

HiPerFASTTM IGBT LightspeedTM Series IXGH 12N60CD1 VCES = IC25 = =VCE(sat) tfi(typ) = 600 24 2.7 55 V A V ns Symbol Test Conditions VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 300 µH PC TC = 25°C TJ T JM Tstg Md Mounting torque with screw M3 Mounting torque with screw M3.5 Weight Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±30 V 24 A 12 A 48 A ICM = 24 @ 0.8 VCES 100 A W -55 ... +150 150 -55 ... +150 °C °C °C 0.45/4 Nm/lb.in. 0.55/5 Nm/lb.in. 6g 300 °C TO-247 AD G CE C (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Features l Very high frequency IGBT l New generation HDMOSTM process l International standard package JEDEC TO-247AD l High peak current handling capability Symbol BVCES VGE(th)...