12N60F

600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. 12N60/12N60F VDSS RDS(ON) ID 600V 0.65Ω 12A Features 12A, 600V, RDS(on) = 0.65Ω @VGS = 10 V Low gate charge ( typical 52nC) Fast switching 100% avalanche tested Improved dv/dt capability Ordering Information PART NUMBER PACKAGE BRAND 12N60/12N60F TO-220/220F 0GFD www.goford.cn TEL：0755-86350980 FAX：0755-86350963 12N60/12N60F Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter 12N60 12N60F VDSS ID Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC ...