UNISONIC TECHNOLOGIES CO., LTD
12N60K-MT
Power MOSFET
12A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 12N60K-M...
UNISONIC TECHNOLOGIES CO., LTD
12N60K-MT
Power
MOSFET
12A, 600V N-CHANNEL
POWER
MOSFET
DESCRIPTION
The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors (
MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology.
These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored.
1 TO-220
1 TO-220F
1 TO-220F1
1 TO-220F2
FEATURES
* RDS(ON) ≤ 0.70Ω @ VGS=10V, ID=6.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness
1 TO-220F3
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N60KL-TA3-T
12N60KG-TA3-T
12N60KL-TF3-T
12N60KG-TF3-T
12N60KL-TF1-T
12N60KG-TF1-T
12N60KL-TF2-T
12N60KG-TF2-T
12N60KL-TF3T-T
12N60KG-TF3T-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3
Pin Assignment 123 GDS GDS GDS GDS GDS
Packing
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www.unisonic.com.tw Copyright © 2019 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-B06.I
12N60K-MT
MARKING
Power
MOSFET
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 9
QW-R502-B06.I
12N60K-MT
Power
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source
Voltage
VD...