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12NN10 Datasheet

Part Number 12NN10
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description Dual N-Channel MOSFET
Datasheet 12NN10 Datasheet12NN10 Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD 12NN10 2.5A, 100V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.  FEATURES * Low Gate Charge (Typically 14.2nC) * RDS(ON) < 0.18Ω @ VGS=10V, ID=2.0A * Fast Switching Speed * Simple Drive Requirement  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free .

  12NN10   12NN10






Dual N-Channel MOSFET

UNISONIC TECHNOLOGIES CO., LTD 12NN10 2.5A, 100V DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.  FEATURES * Low Gate Charge (Typically 14.2nC) * RDS(ON) < 0.18Ω @ VGS=10V, ID=2.0A * Fast Switching Speed * Simple Drive Requirement  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 12NN10G-S08-R 12NN10G-S08-R SOP-8 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 4 5, 6 7, 8 S1 G1 S2 G2 D2 D1 Packing Tape Reel 12NN10G-S08-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) S08: SOP-8 (3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free  MARKING www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-506.F 12NN10 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous(Note 3) Pulsed(Note 2) ID IDM 2.5 10 A A Power Dissipation PD 2 W Junction Temperature TJ -40 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is .


2011-05-01 : 10N50    10N75    10N80    10N90    11N50    11N90    12N50    12N70    12NN10    13N50   


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