13007

13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=80W Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC TJ TSTG 700 400 9 8 80 150 -55~+150 V V V A W oC oC TO-220 1. Base 2. Collector 3. Emitter Electrical Characteristics (TA=25oC) Characteristic Symbol Test Conditions Collector-Emitter Breakdown Voltage BVCEO Emitter Cut-off Current IEBO DC Current Gain hFE(1) hFE(2) Collector-Emitter Saturation Voltage VCE(sat1) VCE(sat2) VCE(sat3) Base-emitter Saturation Voltage VBE(sat1) VBE(sat2) Output Capacitance COB Current Gain Bandwidth Product fT Turn On Time tON Storage Time tSTG Fall Time tf * Pulse Test : PW < 300 s, Duty cycles < 2% IC=10mA, IB=0 VEB=9V, IC=0 VCE=5V, IC=2A VCE=5V, IC=5A IC=2A, IB=0.4A IC=5A, IB=1A IC=8A, IB=2A IC=2A, IB=0.4A IC=5A, IB=1A VCB=10V, f=0.1MHz VCE=10V, IC=0.5A VCC=125V, IC=5A 1B1=-1B2=1A RL=50 Min Typ Max Unit 400 V 1 mA 8 60 5 30 1V 2V 3V 1.2 V 1.6 V 110 pF 4 MHz 1.6 µS 3 µS 0.7 µS Elite Enterprises (H.K.) Co., Ltd. Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K. Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected] Part No.: 13007 Page: 1 / 1 ...