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13007DL Datasheet

Part Number 13007DL
Manufacturers Jingdao
Logo Jingdao
Description Bipolar Junction Transistor
Datasheet 13007DL Datasheet13007DL Datasheet (PDF)

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13007DL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1.APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc 2.FEATURES Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3.PACKAGE 1 VD TO-220 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT C.

  13007DL   13007DL






Bipolar Junction Transistor

R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13007DL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1.APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc 2.FEATURES Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3.PACKAGE 1 VD TO-220 4.Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.2 Electrical Parameter Tamb= 25℃ unless specified PARAMETER SYMBOL Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current DC Current Gain Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time Typical Frequency BVCBO BVCEO BVEBO ICBO ICEO IEBO hFE* VCE * sat VBE * sat tr tf ts fT VCBO VCEO VEBO IC Ptot Tj Tstg 400 200 9 12 2 80 150 -55~150 V V V A W ℃ ℃ TEST CONDITION IC=1mA,IE=0 IC=1mA,IB=0 IE=1mA,IC=0 VCB=400V, IE=0 VCE=200V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=2A IC=8A, IB=1.6A IC=8A, IB=1.6A IC=500mA (UI9600) VCE=10V,IC=0.5A, f=1MHz VALUE MIN TYP MAX 400 200 9 10 20 10 8 15 30 1.0 1.5 1.0 0.5 2.0 6.0 UNIT V V V μA μA μA V V μs μs μs.


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