R
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd.
13007DL
Bipolar Junction Transistor
◆Si NPN ◆RoHS COMPLIANT
1.APPLICATION
Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc
2.FEATURES
Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed
3.PACKAGE
1 VD
TO-220
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
VALUE
UNIT
C.
Bipolar Junction Transistor
R
www.jdsemi.cn
ShenZhen Jingdao Electronic Co.,Ltd.
13007DL
Bipolar Junction Transistor
◆Si NPN ◆RoHS COMPLIANT
1.APPLICATION
Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast,etc
2.FEATURES
Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed
3.PACKAGE
1 VD
TO-220
4.Electrical Characteristics
4.1 Absolute Maximum Ratings
1 Base(B) 2 Collector(C) 3 Emitter(E)
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emittor Voltage
Emittor- Base Voltage
Collector Current
Power Dissipation
Ta=25℃ Tc=25℃
Junction Temperature
Storage Temperature
4.2 Electrical Parameter
Tamb= 25℃ unless specified
PARAMETER
SYMBOL
Collector-Base Voltage Collector-Emittor Voltage Emittor-Base Voltage Collector-Base Cutoff Current Collector-Emittor Cutoff Current Emittor-Base Cutoff Current
DC Current Gain
Collector-Emittor Saturation Voltage Base-Emittor Saturation Voltage Rising Time Falling Time Storage Time
Typical Frequency
BVCBO BVCEO BVEBO
ICBO ICEO IEBO
hFE*
VCE
* sat
VBE
* sat
tr
tf
ts
fT
VCBO VCEO VEBO
IC
Ptot
Tj Tstg
400 200 9 12
2 80 150 -55~150
V V V A
W
℃ ℃
TEST CONDITION
IC=1mA,IE=0 IC=1mA,IB=0 IE=1mA,IC=0 VCB=400V, IE=0 VCE=200V, IB=0 VEB=9V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=2A IC=8A, IB=1.6A IC=8A, IB=1.6A
IC=500mA (UI9600)
VCE=10V,IC=0.5A, f=1MHz
VALUE MIN TYP MAX 400 200
9 10 20 10
8 15 30
1.0 1.5 1.0 0.5 2.0 6.0
UNIT
V V V μA μA μA
V V μs μs μs.