N-Channel MOSFET. 13N50CF Datasheet

13N50CF Datasheet PDF


Part Number

13N50CF

Description

N-Channel MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download 13N50CF Datasheet PDF


13N50CF
June 2014
FQPF13N50CF
N-Channel QFET® FRFET® MOSFET
500 V, 13 A, 540 mΩ
Features
• 13 A, 500 V, RDS(on) = 540 m(Max.) @ VGS = 10 V,
ID = 6.5 A
• Low Gate Charge (Typ. 43 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
• Fast Recovery Body Diode (Typ. 100 ns)
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance and
high avalanche energy strength. These devices are suitable for
switched mode power supplies, active power factor correction
(PFC), and electronic lamp ballasts.
D
GDS
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2006 Fairchild Semiconductor Corporation
FQPF13N50CF Rev. C2
1
S
FQPF13N50CF
500
13
8
52
± 30
530
13
19.5
4.5
48
0.39
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
FQPF13N50CF
2.58
62.5
Unit
°C/W
www.fairchildsemi.com

13N50CF
Package Marking and Ordering Information
Device Marking
FQPF13N50CF
Device
FQPF13N50CF
Package
TO-220F
Reel Size
Tube
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
ΔBVDSS Breakdown Voltage Temperature Coeffi-
/ΔTJ cient
IDSS
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 μA
ID = 250 μA, Referenced to 25°C
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS Forward Transconductance
VDS = VGS, ID = 250 μA
VGS = 10 V, ID = 6.5 A
VDS = 40 V, ID = 6.5 A
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250 V, ID = 13 A,
RG = 25 Ω
VDS = 400 V, ID = 13 A,
VGS = 10 V
(Note 4)
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 13 A
trr Reverse Recovery Time
VGS = 0 V, IS = 13 A,
Qrr Reverse Recovery Charge
dIF / dt = 100 A/μs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 5.6 mH, IAS = 13 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 13 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
Tape Width
N/A
Min Typ
500 --
-- 0.5
-- --
-- --
-- --
-- --
2.0 --
-- 0.43
-- 15
-- 1580
-- 180
-- 20
-- 25
-- 100
-- 130
-- 100
-- 43
-- 7.5
-- 18.5
-- --
-- --
-- --
-- 100
-- 0.35
Quantity
50 units
Max Unit
--
--
10
100
100
-100
V
V/°C
μA
μA
nA
nA
4.0 V
0.54 Ω
-- S
2055
235
25
pF
pF
pF
60 ns
210 ns
270 ns
210 ns
56 nC
-- nC
-- nC
13 A
52 A
1.4 V
160 ns
-- μC
©2006 Fairchild Semiconductor Corporation
FQPF13N50CF Rev. C2
2
www.fairchildsemi.com


Features FQPF13N50CF — N-Channel QFET® FRFET® MOSFET June 2014 FQPF13N50CF N-Chann el QFET® FRFET® MOSFET 500 V, 13 A, 5 40 mΩ Features • 13 A, 500 V, RDS(o n) = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A • Low Gate Charge (Typ. 43 nC) • Low Crss (Typ. 20 pF) • 100% Ava lanche Tested • Fast Recovery Body Di ode (Typ. 100 ns) Description This N-C hannel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET techn ology has been especially tailored to r educe on-state resistance, and to provi de superior switching performance and h igh avalanche energy strength. These de vices are suitable for switched mode po wer supplies, active power factor corre ction (PFC), and electronic lamp ballas ts. D GDS TO-220F G MOSFET Maximum Ratings TC = 25oC unless otherwise note d. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD Parameter Drain to Source V oltage Drain Current Drain Current - Continuous (TC = 25oC) - Continuous (TC = 100o.
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