150N03(G,D)SL
150 Amps,30 Volts N-CHANNEL MOSFET
Featutes
150A,30V,RDS(ON)MAX=2.5mΩ@VGS=10V/20A RDS(ON)MAX=2.8mΩ@VGS=4...
150N03(G,D)SL
150 Amps,30 Volts N-CHANNEL
MOSFET
Featutes
150A,30V,RDS(ON)MAX=2.5mΩ@VGS=10V/20A RDS(ON)MAX=2.8mΩ@VGS=4.5V/20A
Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-252 150N03GSL
TO-251 150N03DSL
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDSS
Gate-Source
Voltage
VGSS
Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
ID IDM EAS TJ,TSTG
TL
Thermal Characteristics
Parameter
Thermal resistance , Junction to Case
Maximum Power Dissipation
TC=25℃
Symbol Rth(J-c)
PD
150N03(G,D)SL 30 ±20 150 440 500
-55 to +150
260
150N03(G,D)SL 1.3 96
UNIT V
A mJ ℃ ℃
Units ℃/W
W
Version1.0-2015.2
www.perfectway.cn
Electrical Characteristics (Tc=25℃,unless otherwise noted)
Parameter
Symbol
Test Conditions
Off Characteristics
Drain-Source Breakdown
Voltage
BVDSS VGS=0V,ID=250uA
Zero Gate
Voltage Drain Current
IDSS
VDS=30V,VGS=0V
Gate-Body Leakage Current,Forward
IGSSF
VGS=20V,VDS=0V
Gate-Body Leakage Current,Reverse
IGSSR
VGS=-20V,VDS=0V
On Characteristics
Gate-Source Threshold
Voltage
VGS(th)
VDS=VGS,ID=250uA
Drain-Source On-State Resistance
RDS(on)
VGS=10V,ID=20A VGS=4.5V,ID=20A
Dynamic Characteristics
Input Capacitance
Ciss
VDS=25V,VGS=0V,
Output Capacitance
Coss
f=1.0MH...