Mixer. 1GC1-4298 Datasheet

1GC1-4298 Datasheet PDF

Keysight 1GC1-4298
DC - 26.5 GHz Packaged
Gilbert-Cell Mixer
Data Sheet
– DC to 26.5 GHz on RF and LO
– DC to 1 GHz IF
– Low conversion loss:•
4 dB typical
input P
dBm @
1-10dBG: Hz
+2 dBm @ 20 GHz
– Single-supply operation:•
Vsupply = –7 V
– RoHS compliant
– QFN SMT package

Part 1GC1-4298
Description DC - 26.5 GHz Packaged Gilbert-Cell Mixer
Feature 1GC1-4298; Keysight 1GC1-4298 DC - 26.5 GHz Packaged Gilbert-Cell Mixer Data Sheet Features –– DC to 26.5 GH.
Manufacture Keysight
Download 1GC1-4298 Datasheet

Keysight 1GC1-4298 DC - 26.5 GHz Packaged Gilbert-Cell Mixer 1GC1-4298 Datasheet

02 | Keysight | 1GC1-4298 DC - 26.5 GHz Packaged Gilbert-Cell Mixer - Data Sheet
The 1GC1-4298 offers substantially improved frequency range and improved broadband
performance in a Gilbert–cell mixer.
The 1GC1-4298 can be utilized as a fundamental, 3rd, 5th, or 7th order harmonic mixer.
The mixer is fabricated using Keysight Technologies, Inc. GaAs HBT process, which
provides excellent process uniformity, reliability, and 1/f noise performance.
The 1GC1-4298 is available in a 3 mm x 3 mm quad flat - no leads (QFN) SMT package to
preserve BW performance and save space on densely populated PC board designs.
Absolute maximum ratings1
Symbol Parameters/conditions
Min Max Units
VEE Emitter voltage
–7.5 –6.5
Vin - RF
CW input power - RF port
+10 dBm
Pin - LO
CW input power - LO port
+10 dBm
Tbs Maximum backside temperature
75 °C
Tstg Storage temperature
–55 +150
Maximum solder relflow temperature
(max. 3 cycles @ 30 sec./cycle)
+260 °C
1.  Operation in excess of any one of these conditions may result in permanent damage to this component.
2.  RTAef=e2r 5to°CJEeDxEceCpJt-fSoTr DTb-0s,2T0stDg,foarnddeTtaasilseyd. reflow profile, 3 reflows max.
– Package type: Quad flat - no
leads (SMT QFN)
– Package dimensions:
3.0 x 3.0 mm (0.118 x 0.118 in)
– Package thickness:
0.90 ± 0.10 mm
(0.035 ± 0.0039 in)
– Lead pitch: 0.5 mm (0.197 in)
– Lead width: 0.2 mm ( 0.078 in)
DC specifications/physical properties1
(TA = 25 °C, unless otherwise listed)
Symbol Parameters/conditions
VEE Emitter voltage
IEE Emitter current
Min Typ Max Units
–7 V
–90 –81 -75 mA
RF performance1
(TA = 25° C, VEE and PLO = -5 dBm, unless otherwise listed)
Symbol Parameters/conditions
DC 0 - 20 GHz
Min. Typ. Max.
BW -LO LO bandwidth
0 20
BW - RF RF bandwidth
0 20
BW - IF IF bandwidth
Pcomp Power compression at 0 dBm input
CE Conversion efficiency
–7 –1
NF Noise figure
L - R LO to RF isolation
R - L RF to LO isolation
L - I LO to IF isolation
R - I RF to IF isolation
21 15
RL RF RF port return loss
11 15
RL LO LO port return loss
RL IF IF port return loss
1.  Numbers given are worst-case across the band unless otherwise noted.
2.  Measured at 1 GHz
DC 20-26.5 GHz
Min. Typ. Max.
20 –24 26
20 26
–10 –5

03 | Keysight | 1GC1-4298 DC - 26.5 GHz Packaged Gilbert-Cell Mixer - Data Sheet
The 1GC1-4298 is ideal for downconverting 0 to 20 GHz signals to an IF of 0 to 1 GHz.
The 1GC1-4298 is particularly well suited for applications that require load–insensitive
conversion loss, good spurious signal suppression, reasonable dynamic range, and low
LO power over a wide bandwidth.
Biasing and Operation
The 1GC1-4298 requires a single –7 V power supply to VEE. Current will be approximately
81 mA.
The 1GC1-4298 does not require capacitors on any ports other than VEE. It is capable of
operation (including pass– through operation) without connecting RFbar and LO bar.
LO power can vary between -10 and 0 dBm.
Pass–thru mode is available with LO bar held at a non–zero voltage – see the Pass–Thru
mode S–parameter plot. For increased gain (S21b), hold LO bar positive; for decreased
gain (S21a), hold LO bar negative.
Recommended pass–thru LO bar voltage is ± 0.5 V, although voltages between ± 0.4 V
and ±1 V are acceptable. These are dissipated through 55 ohms on–chip.
Temperature diode operation
High accuracy (bench process)
With part mounted on a good heat sink, measure Vfwd with 1 mA of current from TD
pad to ground (either polarity is ok) with backside at 25 °C, 45 °C, and 65 °C (or other
temperature points as desired). One of these should be same as bias on case.
Plot Vfwd vs. backside temperature and determine ΔV/ΔT. For these diodes, this value is
~1 mV / °C, and the plot should be very linear.
Bias on part with desired backside temperature.
Allow part to stabilize and measure Vfwd with 1 mA of current as before. Determine ΔT
from calibration curve developed above.
Collect data to determine ΔV/ΔT for date code under analysis. The variation part to part
should be fairly small.
In situ estimation (micro-circuit process)
With part unbiased and micro-circuit temperature stabilized, measure Vfwd with 1 mA of
current from TD pad to ground.
Bias on part and measure Vfwd as before.
Parts with good heat sink and good thermal path should have ΔT ~< 15 °C.
Parts with poor heat sink or thermal path may have ΔT values of 60 °C or higher.

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