KA1H0265R. 1H0265R Datasheet

1H0265R Datasheet PDF


1H0265R
www.DataSheet4U.com
KA1M0265R/KA1H0265R
Fairchild Power Switch(FPS)
www.fairchildsemi.com
Features
• Precision Fixed Operating Frequency
• KA1M0265R (70kHz) , KA1H0265R (100kHz)
• Pulse by Pulse Over Current Limiting
• Over Load Protection
• Over Voltage Protection (Min. 23V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto Restart
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit. compared to discrete MOSFET and
controller or RCC switching converter solution, a Fairchild
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.
TO-220F-4L
1
1. GND 2. DRAIN 3. VCC 4. FB
Internal Block Diagram
#3 VCC
#4 FB
32V 5V Internal
Vref bias
Good
logic
5µA
7.5V
25V
9V
1mA
2.5R
1R
+
OSC
+
S
Q
R
L.E.B
0.1V
+ Thermal S/D
OVER VOLTAGE S/D
S
Q
R
Power on reset
SFET
©2003 Fairchild Semiconductor Corporation
#2 DRAIN
#1 GND
Rev.1.0.2


Part 1H0265R
Description KA1H0265R
Feature 1H0265R; www.DataSheet4U.com www.fairchildsemi.com KA1M0265R/KA1H0265R Fairchild Power Switch(FPS) Features.
Manufacture Fairchild Semiconductor
Datasheet
Download 1H0265R Datasheet


www.DataSheet4U.com www.fairchildsemi.com KA1M0265R/KA1H02 1H0265R Datasheet





1H0265R
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KA1M0265R/KA1H0265R
Absolute Maximum Ratings
Parameter
Maximum Drain Voltage (1)
Drain-Gate Voltage (RGS=1M)
Gate-Source (GND) Voltage
Drain Current Pulsed (2)
Single Pulsed Avalanche Energy (3)
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Symbol
VD,MAX
VDGR
VGS
IDM
EAS
ID
ID
VCC,MAX
VFB
PD
Darting
Operating Ambient Temperature
Storage Temperature
TA
TSTG
Notes:
1. Tj = 25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 51mH, VDD = 50V, RG = 25, starting Tj = 25°C
Value
650
650
±30
8.0
68
2.0
1.3
30
-0.3 to VSD
42
0.33
-25 to +85
-55 to +150
Unit
V
V
V
ADC
mJ
ADC
ADC
V
V
W
W/°C
°C
°C
2



1H0265R
www.DataSheet4U.com
KA1M0265R/KA1H0265R
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BVDSS
Zero Gate Voltage Drain Current
IDSS
Static Drain-Source on Resistance (Note)
Forward Transconductance (Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate Drain (Miller) Charge
RDS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Note:
1. Pulse test: Pulse width 300µS, duty cycle 2%
2. S = -1--
R
Condition
VGS=0V, ID=50µA
VDS=Max., Rating,
VGS=0V
VDS=0.8Max., Rating,
VGS=0V, TC=125°C
VGS=10V, ID=1.0A
VDS=50V, ID=1.0A
VGS=0V, VDS=25V,
f=1MHz
VDD=0.5BVDSS, ID=2.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
VGS=10V, ID=2.0A,
VDS=0.5BVDSS (MOSFET
switching time are
essentially independent of
operating temperature)
Min.
650
-
-
-
1.5
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
5.0
2.5
550
38
17
20
15
55
25
-
3
12
Max.
-
50
200
6.0
-
-
-
-
-
-
-
-
35
-
-
Unit
V
µA
µA
S
pF
nS
nC
3






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