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Ordering number : ENA0925
1HN04CH
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
1HN0...
www.DataSheet4U.com
Ordering number : ENA0925
1HN04CH
SANYO Semiconductors
DATA SHEET
N-Channel Silicon
MOSFET
1HN04CH
Features
General-Purpose Switching Device Applications
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings 100 ±20 120 480 0.6 150 --55 to +150 Unit V V mA mA W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown
Voltage Zero-Gate
Voltage Drain Current Gate-to-Source Leakage Current Cutoff
Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) ⏐yfs⏐ RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=1mA, VGS=0V VDS=100V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=100µA VDS=10V, ID=60mA ID=60mA, VGS=10V ID=30mA, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz 1.2 100 175 6.1 7 19 2.6 1.3 8.0 9.8 Ratings min 100 1 ±10 2.6 typ max Unit V µA µA V mS Ω Ω pF pF pF
Marking : LB
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Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communica...